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5.8ghz Datasheet PDF File

For 5.8ghz Found Datasheets File :: 968 Search Time::3.922ms
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				Hittite Microwave Corporation
Part No.	HMC713LP309
OCR Text	...e Time Supply Voltage: +2.7 to +5.5V Power-Down Mode Excellent Stability over Temperature 16 Lead 3x3 mm SMT Package: 9mm2 12 Functional...8GHz 3.9GHz 7GHz 8GHz 23 21 19 17 15 0 1 2 +25C +85C -40C 23 21 19 17 15 12 POWER DETEC...
Description	54 dB, LOGARITHMIC DETECTOR / CONTROLLER, 50 - 8000 MHz
File Size	564.96K / 12 Page	View it Online	Download Datasheet

				Linear Technology
Part No.	LT5500EGN
OCR Text	5.25V Supply Dual LNA Gain Setting: +13.5dB/-14dB at 2.5GHz Double-Balanced Mixer Internal LO Buffer LNA Input Internally Matched Low Supply...8GHz application) VCC = 3V DC, LNA: fLNA_IN = 1.8GHz, Mixer: fMIX_IN = 1.8GHz, fLO = 1.52GHz, PLO = ...
Description	1.8GHz to 2.7GHz Receiver Front End
File Size	293.50K / 12 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group]
Part No.	BFP193W Q62702-F1577
OCR Text	...apacitance Ceb - VEB = 0.5 V, f = 1 MHz Noise figure F IC = 10 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz Power gain ...8GHz VCE = Parameter 15 dB dB 13 10V 10V 3V 2V G 18 G 5V 3V 12 11 10 9 16 2V...
Description	NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers) NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) From old datasheet system
File Size	60.05K / 7 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	BFP193 Q62702-F1282 BFP193Q62702-F1282
OCR Text	...apacitance Ceb - VEB = 0.5 V, f = 1 MHz Noise figure F IC = 10 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz Power gain ...8GHz VCE = Parameter 13 dB dB 11 10V 5V 3V 2V G 10V 16 5V 3V G 10 9 8 14 2...
Description	NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers) Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) From old datasheet system
File Size	60.37K / 7 Page	View it Online	Download Datasheet

				Hittite Microwave Corporation
Part No.	HMC713LP3E
OCR Text	...e Time Supply Voltage: +2.7 to +5.5V Power-Down Mode Excellent Stability over Temperature 16 Lead 3x3 mm SMT Package: 9mm2 12 Functional...8GHz 3.9GHz 7GHz 8GHz 23 21 19 17 15 0 1 2 +25C +85C -40C 23 21 19 17 15 12 POWER DETEC...
Description	54 dB, LOGARITHMIC DETECTOR / CONTROLLER, 50 - 8000 MHz
File Size	564.88K / 12 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	Q62702-F1359 BFG19S BFG19
OCR Text	... Values typ. max. Unit fT 4 5.5 0.85 0.4 4.6 - GHz pF 1.4 dB 2.5 4 - IC = 70 mA, VCE = 8 V, f = 500 MHz Collector-base capacitanc...8GHz VCE = Parameter 10 dB 10V G G 5V 3V 6 2V 8 1V 6 4 1V 2 4 0.7V...
Description	NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna) NPN Silicon RF Transistor (For low noise low distortion broadband amplifiers in antenna) From old datasheet system NPN Silicon RF Transistor (For low noise/ low distortion broadband amplifiers in antenna)
File Size	49.50K / 6 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group] Infineon Technologies AG
Part No.	Q62702-F1382 BFP183
OCR Text	...ion Symbol Values 12 20 20 2 65 5 mW 250 150 - 65 ... + 150 - 65 ... + 150 295 C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg 1)...8GHz VCE = Parameter 16 dB 10V 5V dB 10V G 18 G 12 3V 2V 3V 2V 16 10 ...
Description	NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA) NPN硅射频晶体管（对于低噪声，高增益2毫安0毫安的集电极电流宽带放大器） NPN Silicon RF Transistor (For low noise high-gain broadband amplifiers at collector currents from 2 mA to 30 mA) From old datasheet system
File Size	60.49K / 7 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	Q62702-F1492 BFR182W
OCR Text	...apacitance Ceb - VEB = 0.5 V, f = 1 MHz Noise figure F IC = 3 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz Power gain 1...8GHz VCE = Parameter 14 dB 10V 3V dB 10V 3V 2V G G 10 16 2V 8 14 6 12 1...
Description	NPN Silicon RF Transistor (For low noise/ high-gain broadband amplifiers at collector currents from 1mA to 20mA) NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA) From old datasheet system
File Size	55.96K / 7 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group]
Part No.	Q62702-F1494 BFR280W
OCR Text	...urrent gain IC = 3 mA, VCE = 5 V Semiconductor Group 2 Dec-11-1996 BFR 280W Electrical Characteristics at TA = 25C, unless...8GHz VCE = Parameter 14 dB 2V 10V 3V 2V G 16 G 10 14 1V 12 0.7V 8 1V 6 ...
Description	NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems From old datasheet system
File Size	56.22K / 7 Page	View it Online	Download Datasheet

				INFINEON TECHNOLOGIES AG
Part No.	BFS482
OCR Text	...s in one package vps05604 6 3 1 5 4 2 eha07196 6 54 3 2 1 c1 e2 b2 c2 e1 b1 tr1 tr2 esd : e lectro s tatic d ischarge sensitive device, ob...8ghz v ce = parameter 0 5 10 15 20 25 30 35 ma 45 i c 0 2 4 6 8 10 db 14 g 8v 5v 3v...
Description	2 CHANNEL, L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
File Size	65.87K / 7 Page	View it Online	Download Datasheet

For 5.8ghz Found Datasheets File :: 968 Search Time::3.922ms
Page :: | 1 | 2 | 3 | <4> | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |