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STMicroelectronics N.V.
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| Part No. |
STS7NF30L
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| OCR Text |
30v - 0.021 w - 7a so-8 stripfet ? power mosfet preliminary data n typical r ds(on) = 0.021 w n standard outline for easy automated surface mount assembly n low threshold drive description ... |
| Description |
N-Channel 30V-0.021Ω-7A SO-8 STripFETTM Power MOSFET(N沟道功率MOSFET) N沟道30V的，0.021Ω- 7A条的SO - 8 STripFETTM功率MOSFET（不适用沟道功率MOSFET的）
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| File Size |
68.26K /
5 Page |
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SamHop Microelectronics
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| Part No. |
STA6610
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| OCR Text |
...v ds s i d r ds (on) ( m ) max 30v 7.6a 23 @ v g s = 10v 35 @ v g s = 4.5v s t a6610 nov.24 2006 1 2 3 4 8 7 6 5 s 1 g 1 s 2 g 2 d 1 d 1 d ...0 3 v drain-s ource on-s tate r es is tance r ds (on) v g s 10v, i d 7a v g s 4.5v, i d =5a 35 on-s ... |
| Description |
Dual N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
115.79K /
6 Page |
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it Online |
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SamHop Microelectronics...
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| Part No. |
STA6968
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| OCR Text |
...d(on) t r t d(of f ) t f v dd = 30v i d = 4.5 a v g s = 10v r g e n = 6 ohm ns ns ns ns total g ate c harge g ate-s ource c harge g ate-drai...0.8 1.2 v b c notes c.g uaranteed by des ign, not s ubject to production tes ting. b.p uls e tes t:p... |
| Description |
S uper high dense cell design for low R DS (ON).
Dual N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
114.71K /
6 Page |
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it Online |
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Wuxi NCE Power Semiconducto...
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| Part No. |
NCE70R360D
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| OCR Text |
...leakage current i gss v gs =30v,v ds =0v 100 na gate threshold voltage v gs(th) v ds =v gs ,i d =250 a 2.5 3 3.5 v drain-source...0.9 1.2 v reverse recovery time t rr 245 ns reverse recovery charge q rr 2.4 uc peak reve... |
| Description |
N-Channel Super Junction Power MOSFET
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| File Size |
665.12K /
10 Page |
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it Online |
Download Datasheet |
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