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ETC[ETC]
NIEC[Nihon Inter Electronics Corporation]
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| Part No. |
11EQ10
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| OCR Text |
...SM Tjw Tstg Symbol IRM VFM 40 1.0 1.0
Approx Net Weight:0.21g 11EQ10 100 Ta=26C* Ta=57C* 50Hz Half Sine Wave Resistive Load Unit V A A A C C Unit mA V C/W
1.57 50Hz Half Sine Wave,1cycle, Non-repetitive - 40 to + 150 - 40 to + 150 Con... |
| Description |
Multiconductor Cable; Number of Conductors:8; Conductor Size AWG:22; No. Strands x Strand Size:7 x 30, 16 x 30; Jacket Material:Polyvinylchloride (PVC); Features:Unshielded; Leaded Process Compatible:Yes; Temperature Max:80 C RoHS Compliant: Yes
SBD
Low Forward Voltage drop Diode
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| File Size |
21.71K /
2 Page |
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Micro Commercial Components Corp.
MCC[Micro Commercial Components]
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| Part No. |
1N277
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| OCR Text |
...
VF
1.00V
IR CJ
250A 0.8pF
IFM = 100mA; TJ = 25C* VR = 50Volts TA = 75C Measured at 1.0MHz, VR=1V
DIMENSIONS INCHES MIN --------.018 1.000 MM MIN --------0.46 25.40
*Pulse test: Pulse width 300 sec, Duty cycle 2%
DIM ... |
| Description |
110 Volt Germanium Diode
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| File Size |
65.01K /
1 Page |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
1N277 JANTXV1N277 JANTX1N277 JAN1N277
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| OCR Text |
...ut probes TV video detectors
1.0" 25.4 mm (Min.)
DO-7 Glass Package
0.018-0.022" 0.458-.558 mm
Length
0.230-0.30" 5.85-7.62mm
Dia
0.085-.107 " 2.16-2.71 mm
Features
Lower leakage current Flat junction capacitance High mecha... |
| Description |
Optimized for Radio Frequency Response
Germanium Diode
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| File Size |
62.09K /
1 Page |
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it Online |
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Compensated Devices Incorporated
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| Part No. |
1N4112-1
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| OCR Text |
...0 250 250 250 250
A
10 10 1.0 1.0 1.0 1.0 .05 .05 .05 .05 .05 .05 .05 .05 .05 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01
VOLTS 5.17 5.70 6.24 6.61 6.92 7.60 8.44 9.12 9.87 10.65 11.40 12.1... |
| Description |
LOW CURRENT OPERATION AT 250 uA
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| File Size |
101.72K /
3 Page |
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it Online |
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Chenyi Electronics
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| Part No. |
1N4447
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| OCR Text |
...s cathode end . Weight: Approx. 0.13gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Peak reverse Type VRM(V)
Max. Aver. Current
Max. Dissip At 25
Max. temperature
Max. Forward ... |
| Description |
SMALL SIGNAL SWITCHING DIODE
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| File Size |
49.82K /
2 Page |
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it Online |
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PHILIPS[Philips Semiconductors]
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| Part No. |
1N4532 1N4531
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| OCR Text |
...e Tamb = 25 C - - - - -65 - 4 1 0.5 500 +200 200 A A A mW C C see Fig.2 CONDITIONS MIN. - - - - MAX. 75 75 200 450 V V mA mA UNIT
1996 Sep 03
2
Philips Semiconductors
Product specification
High-speed diodes
ELECTRICAL CHARAC... |
| Description |
High-speed diodes
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| File Size |
36.27K /
7 Page |
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Philips
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| Part No. |
1N4532
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| OCR Text |
...e Tamb = 25 C - - - - -65 - 4 1 0.5 500 +200 200 A A A mW C C see Fig.2 CONDITIONS MIN. - - - - MAX. 75 75 200 450 V V mA mA UNIT
1996 Sep 03
2
Philips Semiconductors
Product specification
High-speed diodes
ELECTRICAL CHARAC... |
| Description |
High-speed diodes
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| File Size |
42.93K /
8 Page |
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MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
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| Part No. |
1N4607 1N4608
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| OCR Text |
...O-35 Glass Package La dDa . e i 0. 1 - . 2 " 0 80 0 2 0. 5 - . 5 m m 4 80 5 8
1.0" 25.4 mm (Min.)
Length
0.120-.200" 3.05-5.08- m
Dia.
0.06-0.09"
m
15 - . 8m m . 322
Maximum Ratings Peak Inverse Voltage @ 5A & 0.1A @ -55... |
| Description |
Silicon Switching Diode DO-35 Glass Package
Signal or Computer Diode
Silicon Switching Diode DO-35 Glass Package 0.2 A, SILICON, SIGNAL DIODE, DO-35
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| File Size |
231.78K /
4 Page |
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it Online |
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Price and Availability
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