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  -10v Datasheet PDF File

For -10v Found Datasheets File :: 81052    Search Time::2.375ms    
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    2SA2093

ROHM[Rohm]
Part No. 2SA2093
OCR Text ...100mA VCE= -2V IC= -100mA VCE= -10v IE=100mA f=10MHz VCB= -10v IE=0mA f=1MHz IC= -2.0A IB1= -200mA IB2=200mA VCC -25V Collector-emitter saturation voltage DC current gain VCE (sat) hFE - 120 - -200 - -500 390 - mV - ...
Description Power transistor ( 60V/2A)
Power transistor (−60V, −2A)
Power transistor (-60V, -2A)

File Size 81.67K  /  4 Page

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    2SA2113

ROHM[Rohm]
Part No. 2SA2113
OCR Text ...rrent gain fT - 350 - MHz VCE= -10v, IE=100mA, f=10MHz Transition frequency Collector output capacitance Cob - 25 - pF VCB= -10v, IE=0mA, f=1MHz Ton - 25 - ns IC= -2A Turn-on time IB1= -200mA Tstg - 100 - ns IB2=200mA Storage time Tf - 20 -...
Description Medium power transistor ( 30V/2A)
Medium power transistor (−30V, −2A)
Medium power transistor (-30V, -2A)

File Size 42.97K  /  4 Page

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    2SA683 2SA684

PANASONIC[Panasonic Semiconductor]
Part No. 2SA683 2SA684
OCR Text ...IB = 0 IE = -10A, IC = 0 VCE = -10v, IC = -500mA VCE = -5V, IC = -1A IC = -500mA, IB = -50mA IC = -500mA, IB = -50mA VCB = -10v, IE = 50mA, f = 200MHz VCB = -10v, IE = 0, f = 1MHz -30 -60 -25 -50 -5 85 50 - 0.2 - 0.85 200 20 30 - 0.4 -1.2 V...
Description Silicon PNP epitaxial planer type

File Size 46.38K  /  3 Page

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    2SA719 2SA720

Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
Part No. 2SA719 2SA720
OCR Text ...IB = 0 IE = -10A, IC = 0 VCE = -10v, IC = -150mA VCE = -10v, IC = -500mA IC = -300mA, IB = -30mA IC = -300mA, IB = -30mA VCB = -10v, IE = 50mA, f = 200MHz VCB = -10v, IE = 0, f = 1MHz -30 -60 -25 -50 -5 85 40 - 0.35 -1.1 200 6 15 - 0.6 -1.5...
Description Silicon PNP epitaxial planer type(For low-frequency power amplification and driver amplification) 500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92

File Size 46.13K  /  3 Page

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    2SA720A

PANASONIC[Panasonic Semiconductor]
Part No. 2SA720A
OCR Text ...IB = 0 IE = -10A, IC = 0 VCE = -10v, IC = -150mA*2 VCE = -10v, IC = -500mA*2 IC = -300mA, IB = -30mA*2 IC = -300mA, IB = -30mA*2 VCB = -10v, IE = 50mA, f = 100MHz VCB = -10v, IE = 0, f = 1MHz min typ max - 0.1 Unit A V V V -8...
Description Silicon PNP epitaxial planer type(For low-frequency driver amplification)

File Size 37.37K  /  2 Page

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    2SA777

PANASONIC[Panasonic Semiconductor]
Part No. 2SA777
OCR Text ...IB = 0 IE = -10A, IC = 0 VCE = -10v, IC = -150mA VCE = -5V, IC = -500mA IC = -300mA, IB = -30mA IC = -300mA, IB = -30mA VCB = -10v, IE = 50mA, f = 100MHz VCB = -10v, IE = 0, f = 1MHz min typ 3.2 1 2 3 1:Emitter 2:Collec...
Description Silicon PNP epitaxial planer type(For low-frequency driver amplification)

File Size 45.63K  /  3 Page

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    2SA838

Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. 2SA838
OCR Text ...fT NF Zrb Cre Conditions VCB = -10v, IE = 0 VCE = -20V, IB = 0 VEB = -5V, IC = 0 VCE = -10v, IC = -1mA IC = -10mA, IB = -1mA VCE = -10v, IC = -1mA VCB = -10v, IE = 1mA, f = 200MHz VCB = -10v, IE = 1mA, f = 5MHz VCE = -10v, IC = -1mA, f = 2M...
Description Silicon PNP epitaxial planer type(For high-frequency amplification Complementary to 2SC1359)

File Size 36.38K  /  2 Page

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    2SA879

PANASONIC[Panasonic Semiconductor]
Part No. 2SA879
OCR Text ... IB = 0 IE = -1A, IC = 0 VCE = -10v, IC = -5mA IC = -50mA, IB = -5mA VCB = -10v, IE = 10mA, f = 200MHz VCB = -10v, IE = 0, f = 1MHz 50 80 5 10 -200 -5 60 220 -1.5 V MHz pF min typ max -2 Unit A V V *h FE Rank classification Q 60 ~...
Description Silicon PNP epitaxial planer type

File Size 45.28K  /  3 Page

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    FCH043N60

Fairchild Semiconductor
Part No. FCH043N60
OCR Text ...f q g(tot) total gate charge at 10v v ds = 380 v, i d = 38 a, v gs = 10 v (note 4) - 163 215 nc q gs gate to source gate charge - 35 - nc q gd gate to drain ?m...
Description N-Channel SuperFET II MOSFET

File Size 424.68K  /  10 Page

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    PMGD130UN

NXP Semiconductors
Part No. PMGD130UN
OCR Text ...forward transconductance v ds =10v; i d = 1.2 a; t j =25c - 4.1 - s dynamic characteristics (per transistor) q g(tot) total gate charge v ds =10v; i d = 1.2 a; v gs =4.5v; t j =25c - 0.88 1.3 nc q gs gate-source charge - 0.12 - nc q gd ga...
Description 20 V, dual N-channel Trench MOSFET

File Size 870.38K  /  15 Page

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For -10v Found Datasheets File :: 81052    Search Time::2.375ms    
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