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spa a Datasheet PDF File

For spa a Found Datasheets File :: 889 Search Time::1.532ms
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				SIRENZA[SIRENZA MICRODEVICES]
Part No.	spa-2318 spa-2318Z
OCR Text	spa-2318 Product Description Sirenza Microdevices' spa-2318 is a high efficiency Gaas Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using mole...
Description	1700-2200 MHz 1 Watt Power amp with active Bias
File Size	198.15K / 9 Page	View it Online	Download Datasheet

				RF Micro Devices http://
Part No.	spa-1426Z spa-1426Z-EVB1 spa-1426Z-EVB2 spa-1426Z-EVB3
OCR Text	spa-1426Z 0.7GHz to 2.2GHz 1W InGaP HBT amplifier Preliminary spa-1426Z 0.7GHz to 2.2GHz 1W InGaP HBT aMPLIFIER RoHS Compliant and P...a high linearity single-stage class a Heterojunction Bipolar Transistor (HBT) power amplifier. The S...
Description	0.7GHz to 2.2GHz 1W InGaP HBT aMPLIFIER
File Size	517.31K / 14 Page	View it Online	Download Datasheet

				SIRENZA[SIRENZA MICRODEVICES]
Part No.	spa-1318
OCR Text	spa-1318 is a high efficiency Gaas Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces...
Description	2150 MHz 1 Watt Power amplifier with active Bias
File Size	84.61K / 5 Page	View it Online	Download Datasheet

				SIRENZA MICRODEVICES
Part No.	spa-1118 spa-1118Z
OCR Text	spa-1118 Product Description Sirenza Microdevices' spa-1118 is a high efficiency Gaas Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using mole...
Description	850 MHz 1 Watt Power amplifier with active Bias
File Size	105.73K / 5 Page	View it Online	Download Datasheet

				Stanford Microdevices
Part No.	spa-1318
OCR Text	spa-1318 is a high efficiency Gaas Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces...
Description	2150 MHz 1 Watt Power amplifier with active Bias
File Size	219.37K / 6 Page	View it Online	Download Datasheet

				Stanford Microdevices
Part No.	spa-1218
OCR Text	spa-1218 is a high efficiency Gaas Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces...
Description	1960 MHz 1 Watt Power amp with active Bias
File Size	206.34K / 5 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers ETC[ETC] SIRENZA[SIRENZA MICRODEVICES]
Part No.	spa-2118
OCR Text	spa-2118 is a high efficiency Gaas Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces...
Description	850 MHz 1 Watt Power amplifier with active Bias
File Size	211.25K / 6 Page	View it Online	Download Datasheet

				SIRENZA MICRODEVICES
Part No.	spa-1218
OCR Text	spa-1218 is a high efficiency Gaas Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces...
Description	1960 MHz 1 Watt Power amplifier with active Bias
File Size	91.97K / 5 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	spa08N80C3 SPP08N80C3
OCR Text	...24 340 0.2 8 20 30 104 Value spa Unit a 81) 5.11) 24 340 0.2 8 20 30 40 W C a V a mJ Pulsed drain current, tp limited by Tjmax avalanche energy, single pulse ID=1.6a, VDD=50V avalanche energy, repetitive taR limited by Tjmax2) ...
Description	Cool MOS?/a> Power Transistor Cool MOS⑩ Power Transistor Cool MOS Power Transistor for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...
File Size	249.57K / 12 Page	View it Online	Download Datasheet

				POSEICO[Power Semiconductors] POSEICO SPA
Part No.	aR2009 aR2009S44
OCR Text	spa POwer SEmiconductors Italian COrporation POSEICO spa Via N. Lorenzi 8, 16152 Genova - ITaLY Tel. ++ 39 010 6556234 - Fax ++ 39 010 65...a 18.5 ka FINaL SPECIFICaTION nov 02 - ISSUE : 05 Symbol Characteristic Conditions T...
Description	4400 V, 1560 a, 18.5 ka rectifier diode Circular Connector; No. of Contacts:5; Series:; Body Material:aluminum alloy; Connecting Termination:Solder; Connector Shell Size:32; Circular Contact Gender:Socket; Circular Shell Style:Cable Receptacle; Insert arrangement:32-1 RoHS Compliant: No
File Size	164.94K / 4 Page	View it Online	Download Datasheet

For spa a Found Datasheets File :: 889 Search Time::1.532ms
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