... M P L E :L ETH IS IS A N Air F ir F1 0 1 0 W H ASSEMB W ITH ITA S S E M B L Y L Y L C CO 9B 9B L O T O TO D E D E 1M 1 M
A A
IN TE R N A N A N IN TE R N A T IO TIOL A L R E C TIF R E C TIFIE R IE R ir F ir F 10 1 0 1 0 10 L LOGO GO 9 2...
Description
Power MOSFET(Vdss=150V/ Rds(on)=0.042ohm/ Id=43A) Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A) Power MOSFET(Vdss=150V Rds(on)=0.042ohm Id=43A)
...s --TO-204AE (Modified TO-3)
ir WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 ir EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 ir CANA...
Description
Repetitive Avalanche Ratings TRANSISTORS N-CHANNEL(Vdss=400V/ Rds(on)=0.20ohm/ Id=25A) TRANSISTORS N-CHANNEL(Vdss=400V, Rds(on)=0.20ohm, Id=25A) 400V Single N-Channel Hi-Rel MOSFET in a TO-204AE package
...
E X A M P L E : TH IS I S A N ir F 1 0 1 0 W IT H A S S E M B L Y LOT C ODE 9B1M
A
IN T E R N A T IO N A L R E C T IF IE R LOGO A SS E M BL Y LOT CODE
PART NUMBER ir F 1 0 1 0 9 24 6 9B 1M
DATE C ODE (Y Y W W ) YY = YE A R W W =...
Description
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A? Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A) Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?) Power MOSFET(Vdss=30V/ Rds(on)max=2.8mohm/ Id=210A)
...A
0 0 40 80
FO R TE S T C ir C U IT S E E FIG U R E 1 3
120 160 200
A
V D S , D rain-to-S ourc e V oltage (V )
Q G , T otal ...Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
...
Description
Power MOSFET(Vdss=100V, Rds(on)=0.025ohm, Id=57A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 0.025ohm,身份证\u003d 57A条) Power MOSFET(Vdss=100V/ Rds(on)=0.025ohm/ Id=57A) Power MOSFET(Vdss=100V Rds(on)=0.025ohm Id=57A)
...
A
0 0 40 80
FOR TE ST C ir C U IT SE E FIG U R E 1 3
120 160
A
200
-VD S , Drain-to-Source V oltage (V)
Q G , Total G a...Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
+
-
...
Description
Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条) Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A) -55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package -55V Single P-Channel HEXFET Power MOSFET in a TO-262 package
...
A
0 0 40 80
FOR TE ST C ir C U IT SE E FIG U R E 1 3
120 160
A
200
-VD S , Drain-to-Source V oltage (V)
Q G , Total G a...Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
+
-
...
Description
Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条) -55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
...
0 0 10 20 30
FO R TE S T C ir C U IT S E E FIG U R E 1 3
40 50 60
A
-V D S , D rain-to-S ourc e V oltage (V )
Q G , T otal G ...Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
+
-
...
Description
Power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A) Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)
...
0 0 10 20 30
FO R TE S T C ir C U IT S E E FIG U R E 1 3
40 50 60
A
-V D S , D rain-to-S ourc e V oltage (V )
Q G , Total G a...Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
...
...0 0 5 10 15 20
FO R TE S T C ir C U IT S E E FIG U R E 1 3
25 30 35 40 45
A
V D S , D rain-to-S ourc e V oltage (V )
Q G , T ot...Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
...
Description
Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A) HEXFET Power MOSFET Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A)
...8 ) 7 .9 ( .31 2 )
F E E D D ir E C T IO N
NOTES: 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E TE R S (IN C H E S ). 3 . O U T L IN E C O N F O R M S T O E I...