igbt
The HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of M...mosfet and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage...
Description
From old datasheet system 600V SMPS Series N-Channel igbt 600V, SMPS Series N-Channel igbt 600V/ SMPS Series N-Channel igbt
...and 150oC at rated current. The igbt is developmental type TA49190. The diode used in anti-parallel with the igbt is the RHRD660 (TA49057). The igbt is ideal for many high voltage switching applications operating at moderate frequencies whe...
Description
14A/ 600V/ UFS Series N-Channel igbts with Anti-Parallel Hyperfast Diode 14 A, 600 V, UFS N-Channel igbt with Anti-Parallel Hyperfast Diode 14A, 600V, UFS Series N-Channel igbts with Anti-Parallel Hyperfast Diode TRANSISTOR | igbt | N-CHAN | 600V V(BR)CES | 7A I(C) | TO-263AB
...ely between 25oC and 150oC. The igbt is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for soleno...
Description
From old datasheet system 14A 600V UFS Series N-Channel igbts 14A, 600V, UFS Series N-Channel igbts
igbt with Anti-Parallel Hyperfast Diodes
Packaging
JEDEC TO-220AB
EMITTER COLLECTOR GATE COLLECTOR (FLANGE)
January 1997
Features
...mosfet and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage...
Description
3.3V 72-mc CPLD 14A, 600V, UFS Series N-Channel igbt with Anti-Parallel Hyperfast Diodes 14A/ 600V/ UFS Series N-Channel igbt with Anti-Parallel Hyperfast Diodes
...ely between 25oC and 150oC. The igbt is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for soleno...
Description
3.3V 72-mc CPLD 14A, 600V, UFS Series N-Channel igbts 14A 600V UFS Series N-Channel igbts From old datasheet system
...ely between 25oC and 150oC. The igbt is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for soleno...
Description
3.3V 72-mc CPLD 14A 600V UFS Series N-Channel igbts 14A, 600V, UFS Series N-Channel igbts 14A/ 600V/ UFS Series N-Channel igbts
...ge, high speed power mosfet and igbt drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with st...
...ge, high speed power mosfet and igbt driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with sta...
...ge, high speed power mosfet and igbt drivers with dependent high and low side referenced output channels. Proprietary HVIC 8-Lead SOIC IR2103S and latch immune CMOS technologies enable rug8-Lead PDIP gedized monolithic construction. The log...
...ge, high speed power mosfet and igbt driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with stand...