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TOSHIBA
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| Part No. |
TPH11003NL
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| OCR Text |
...te 3: device mounted on a glass-epoxy board (a), figure 5.1 note 4: device mounted on a glass-epoxy board (b), figure 5.2 note 5: v dd = 24 v, t ch = 25 (initial), l = 190 h, i ar = 11 a fig. fig. fig. fig. 5.1 5.1 5.1 5.1 devic... |
| Description |
Power MOSFET (N-ch single VDSS≤30V)
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| File Size |
231.75K /
9 Page |
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it Online |
Download Datasheet
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TOSHIBA
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| Part No. |
TPCP8007-H
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| OCR Text |
... (a) device mounted on a glass-epoxy board (a ) (b) device mounted on a glass-epoxy board (b) note 3: v dd = 24 v, t ch = 25c (initial), l = 500 h, r g = 1 , i ar = 5 a note 4: repetitive rating: puls... |
| Description |
Power MOSFET (N-ch single 30V<VDSS≤60V)
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| File Size |
177.46K /
7 Page |
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it Online |
Download Datasheet |
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TOSHIBA
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| Part No. |
TPCC8002-H
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| OCR Text |
... (a) device mounted on a glass-epoxy board (a) (b) device mounted on a glass-epoxy board (b) note 3: v dd = 24 v, t ch = 25c (initial), l = 200 h, r g = 25 , i ar = 22 a note 4: repetitive r... |
| Description |
Power MOSFET (N-ch single VDSS≤30V)
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| File Size |
231.57K /
7 Page |
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it Online |
Download Datasheet |
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TOSHIBA
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| Part No. |
TPCA8A09-H
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| OCR Text |
...te 2: device mounted on a glass-epoxy board (a), figure 5.1 note 3: device mounted on a glass-epoxy board (b), figure 5.2 note 4: v dd = 24 v, t ch = 25 (initial), l = 0.1 mh, r g = 1 ? , i ar = 51 a fig. fig. fig. fig. 5.1 5.1 5... |
| Description |
Power MOSFET (N-ch single VDSS≤30V)
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| File Size |
252.28K /
9 Page |
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it Online |
Download Datasheet |
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TOSHIBA
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| Part No. |
TPC6009-H
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| OCR Text |
...te 2: device mounted on a glass-epoxy board (a), figure 5.1 note 3: device mounted on a glass-epoxy board (b), figure 5.2 note 4: v dd = 24 v, t ch = 25 (initial), l = 0.2 mh, r g = 1 ? , i ar = 5.3 a fig. fig. fig. fig. 5.1 5.1 ... |
| Description |
Power MOSFET (N-ch single 30V<VDSS≤60V)
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| File Size |
227.03K /
9 Page |
View
it Online |
Download Datasheet |
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TOSHIBA
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| Part No. |
TPCC8003-H
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| OCR Text |
... (a) device mounted on a glass-epoxy board (a) (b) device mounted on a glass-epoxy board (b) note 3: v dd = 24 v, t ch = 25c (initial), l = 200 h, r g = 25 , i ar = 13 a note 4: repetitive rating: pu... |
| Description |
Power MOSFET (N-ch single VDSS≤30V)
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| File Size |
231.50K /
7 Page |
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it Online |
Download Datasheet |
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TOSHIBA
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| Part No. |
TPCA8068-H
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| OCR Text |
...te 2: device mounted on a glass-epoxy board (a), figure 5.1 note 3: device mounted on a glass-epoxy board (b), figure 5.2 note 4: v dd = 24 v, t ch = 25 (initial), l = 0.2 mh, r g = 1.2 ? , i ar = 15 a fig. fig. fig. fig. 5.1 5.1... |
| Description |
Power MOSFET (N-ch single VDSS≤30V)
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| File Size |
227.73K /
9 Page |
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it Online |
Download Datasheet |
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TOSHIBA
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| Part No. |
TPC8228-H
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| OCR Text |
...te 2: device mounted on a glass-epoxy board (a), figure 5.1 note 3: device mounted on a glass-epoxy board (b), figure 5.2 note 4: power dissipation and thermal resistance values per device with the other device being off (duri... |
| Description |
Power MOSFET (N-ch dual)
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| File Size |
255.40K /
9 Page |
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it Online |
Download Datasheet |
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MIMIX[Mimix Broadband]
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| Part No. |
22DSBA0423
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| OCR Text |
...on to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for microwave, millimeter-wave, wideband military, and fiber optic applications.
Absolute Maximum Ratings
Supply Voltage (Vd) Supply... |
| Description |
10.0-40.0 GHz GaAs MMIC Distributed Amplifier
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| File Size |
446.34K /
5 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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