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  drain-source Datasheet PDF File

For drain-source Found Datasheets File :: 68662    Search Time::1.672ms    
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    Kersemi Electronic Co., Ltd.
Part No. FQPF3N60
OCR Text ... parameter fqpf3n60 units v dss drain-source voltage 600 v i d drain current - continuous (t c = 25c) 2.0 a - continuous (t c = 100c) 1.26 a i dm drain current - pulsed (note 1) 8.0 a v gss gate-source voltage 30 v e as single pulsed...
Description 600V N-Channel MOSFET

File Size 728.67K  /  7 Page

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    AF4835P AF4835PS AF4835PSA AF4835PSL AF4835PSLA

ETC
ANACHIP[Anachip Corp]
Part No. AF4835P AF4835PS AF4835PSA AF4835PSL AF4835PSLA
OCR Text ... G D Description Source Gate Drain SOP-8 Ordering information AX Feature F :MOSFET PN 4835P X X X Package S: SOP-8 Lead Free Blank : Normal L : Lead Free Package Packing Blank : Tube or Bulk A : Tape & Reel This datasheet conta...
Description P-Channel 30-V (D-S) MOSFET
P-Channel Enhancement Mode Power MOSFET

File Size 245.21K  /  6 Page

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    NXP
Part No. NX3020NAKS
OCR Text ...yp max unit per transistor v ds drain-source voltage - - 30 v v gs gate-source voltage t j = 25 c -20 - 20 v i d drain current v gs = 4.5 v; t amb = 25 c [1] - - 180 ma static characteristics (per transistor) r dson drain-source on-state...
Description MOSFET

File Size 271.34K  /  15 Page

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    APM4835 APM4835KC-TR APM4835KC-TU

Anpec Electronics Corporation
ETC[ETC]
ANPEC[Anpec Electronics Coropration]
http://
Part No. APM4835 APM4835KC-TR APM4835KC-TU
OCR Text ...tings Symbol VDSS VGSS ID* IDM drain-source Voltage Gate-Source Voltage Parameter (TA = 25C unless otherwise noted) Rating -30 25 TA = 25C -8 -50 Unit V A Maximum Drain Current - Continuous Maximum Drain Current - Pulsed *Surface...
Description P-Channel Enhancement Mode MOSFET

File Size 125.16K  /  9 Page

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    NTHD5902T1 NTHD5902T1-D

ON Semiconductor
Part No. NTHD5902T1 NTHD5902T1-D
OCR Text ... voltage v gs 20 v continuous drain current (t j = 150 c) (note 1) t a = 25 c t a = 85 c i d 3.9 2.8 2.9 2.1 a pulsed drain current i dm 10 a continuous source current (diode conduction) (note 1) i s 1.8 0.9 a maximum powe...
Description Power MOSFET Dual N-Channel ChipFET 2.9 Amps, 30 Volts
Power MOSFET Dual N-Channel ChipFET TM(双N沟道ChipFET TM功率MOSFET) 2900 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

File Size 52.06K  /  8 Page

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    BTS117

INFINEON TECHNOLOGIES AG
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BTS117
OCR Text ...iving possible Product Summary Drain source voltage On-state resistance Current limit Nominal load current Clamping energy VDS RDS(on) ID(lim) ID(ISO) EAS 60 7 3.5 V A A 100 m 1000 mJ Application * All kinds of resisti...
Description 10 A BUF OR INV BASED PRPHL DRVR, PSFM3
Smart Lowside Power Switch (Logic Level Input Input Protection ESD Thermal Shutdown Overload protection)
From old datasheet system

File Size 137.31K  /  10 Page

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    BTS118D

Infineon Technologies A...
INFINEON[Infineon Technologies AG]
Part No. BTS118D
OCR Text ...P-TO252-3-11 Product Summary Drain source voltage On-state resistance Nominal load current Clamping energy VDS RDS(on) ID(Nom) EAS 42 100 2.4 2 V mW A J Application * All kinds of resistive, inductive and capacitive loads in switchin...
Description Smart Lowside Power Switch

File Size 331.57K  /  10 Page

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    BTS120 C67078-A5009-A2

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. BTS120 C67078-A5009-A2
OCR Text drain pin is electrically shortet to the tab 1 2 3 Pin 1 G 2 D 3 S Type BTS 120 VDS 100 V ID 19 A RDS(on) 0.1 ...source voltage Drain-gate voltage, RGS = 20 k Gate-source voltage Continuous drain current, TC = 25 ...
Description From old datasheet system
TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic)
N-Channel TEMPFET

File Size 310.34K  /  9 Page

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