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For avionics Found Datasheets File :: 1490    Search Time::1.125ms    
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    PHILIPS[Philips Semiconductors]
Part No. BLA1011-300
OCR Text avionics LDMOS transistors Rev. 01 -- 3 April 2007 Product data sheet 1. Product profile 1.1 General description 300 W LDMOS pulsed power transistor for TCAS and IFF applications at frequencies from 1030 MHz to 1090 MHz. Table 1. Typ...
Description avionics LDMOS transistors

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    MAPRST0912-350 MAPRST0912-350-15

M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
Part No. MAPRST0912-350 MAPRST0912-350-15
OCR Text avionics Pulsed Power Transistor 350W, 960-1215 MHz, 10s Pulse, 10% Duty Features * * * * * * * * * NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Dif...
Description avionics Pulsed Power Transistor 350W, 960-1215 MHz, 10μs Pulse, 10% Duty
avionics Pulsed Power Transistor 350W, 960-1215 MHz, 10楼矛s Pulse, 10% Duty

File Size 113.96K  /  4 Page

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    MAPRST0912-50 MAPRST0912-50-15

M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
Part No. MAPRST0912-50 MAPRST0912-50-15
OCR Text avionics Pulsed Power Transistor 50W, 960-1215 MHz, 10s Pulse, 10% Duty Features * * * * * * * * * NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diff...
Description avionics Pulsed Power Transistor 50W, 960-1215 MHz, 10μs Pulse, 10% Duty
avionics Pulsed Power Transistor 50W, 960-1215 MHz, 10楼矛s Pulse, 10% Duty

File Size 151.17K  /  4 Page

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    MAPRST1030-1KS MAPRST1030-1KS-15

M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
Part No. MAPRST1030-1KS MAPRST1030-1KS-15
OCR Text avionics Pulsed Power Transistor 1000W, 1030 MHz, 10s Pulse, 1% Duty Features * * * * * * * * * NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffuse...
Description avionics Pulsed Power Transistor 1000W, 1030 MHz, 10μs Pulse, 1% Duty
avionics Pulsed Power Transistor 1000W, 1030 MHz, 10楼矛s Pulse, 1% Duty

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    BLA6H1011-600

NXP Semiconductors N.V.
Part No. BLA6H1011-600
OCR Text avionics power transistor Rev. 01 -- 22 April 2010 Product data sheet 1. Product profile 1.1 General description 600 W LDMOS pulsed power transistor intended for TCAS and IFF applications in the 1030 MHz to 1090 MHz range. Table 1. T...
Description LDMOS avionics power transistor BLA6H1011-600<SOT539A (SOT539A)|<<http://www.nxp.com/packages/SOT539A.html<1<Always Pb-free,;

File Size 120.07K  /  13 Page

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    HVV1011-035

HVVi Semiconductors, Inc.
Part No. HVV1011-035
OCR Text ...istor DESCRIPTION L-Band pulsed avionics applications PACKAGE designed for designed voltage The high power HVV1011-035 device is a high voltage 1030MHz silicon enhancement mode RF transistor 1090MHz. operating toover the frequency range fro...
Description L-Band avionics Pulsed Power Transistor 1030-1090MHz, 50楼矛s Pulse, 5% Duty for TCAS and Mode-S Applications
L-Band avionics Pulsed Power Transistor 1030-1090MHz, 50μs Pulse, 5% Duty for TCAS and Mode-S Applications

File Size 630.54K  /  2 Page

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    HVV1012-060

HVVi Semiconductors, Inc.
Part No. HVV1012-060
OCR Text avionics Pulsed Power Transistor L-Band avionics HVV1012-050MHz, 10s Pulse, 1% Duty L-Band avionics Power Transistor The innovative Semiconductor Company! Pulsed10s Pulse, 1% Duty L-Band avionics MHz, Pulsed Power Transistor 1025-1150 1025-...
Description L-Band avionics Pulsed Power Transistor 1025-1150MHz, 10楼矛s Pulse, 1% Duty for DME and TCAS Apllications
L-Band avionics Pulsed Power Transistor 1025-1150MHz, 10μs Pulse, 1% Duty for DME and TCAS Apllications

File Size 705.74K  /  2 Page

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    HVV1012-100

HVVi Semiconductors, Inc.
Part No. HVV1012-100
OCR Text avionics Pulsed Power Transistor HVV1012-100 The innovative Semiconductor Company!MHz, 10s Pulse, 1% Duty L-Band avionics Pulsed Power Transistor 1025-1150 L-Band MHz, HVV1012-100 10s Pulse, 1% Transistor 1025-1150avionics Pulsed Power Duty...
Description L-Band avionics Pulsed Power Transistor 1025-1150MHz, 10楼矛s Pulse, 1% Duty for DME and TCAS Applications
L-Band avionics Pulsed Power Transistor 1025-1150MHz, 10μs Pulse, 1% Duty for DME and TCAS Applications

File Size 810.16K  /  2 Page

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    HVV1012-250 HVV1012-250-EK

HVVi Semiconductors, Inc.
Part No. HVV1012-250 HVV1012-250-EK
OCR Text avionics Pulsed Power Transistor 1025-1150 MHz, 10s Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications FeatuRes * Silicon MOSFET Technology * Operation from 24V to 50V * High Power Gain * Extreme Ruggedness * Internal Inpu...
Description L-Band avionics Pulsed Power Transistor 1025-1150 MHz, 10楼矛s Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications
L-Band avionics Pulsed Power Transistor 1025-1150 MHz, 10μs Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications

File Size 684.79K  /  5 Page

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    BLA0912-250R

NXP Semiconductors
Part No. BLA0912-250R
OCR Text avionics LDMOS power transistor Rev. 01 -- 3 March 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic c...
Description avionics LDMOS power transistor

File Size 122.00K  /  13 Page

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