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For 50-tp Found Datasheets File :: 42506 Search Time::4.046ms
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				Power Innovations Ltd Power Innovations Limited
Part No.	BUPD1520
OCR Text	...L VALUE 700 1500 11 2 2.5 2 2.5 50 -55 to +125 -55 to +150 300 UNIT V V V A A A A W C C C PRODUCT INFORMATION Information is curren...tp = 300 s, duty cycle 2%. 3. These parameters must be measured using voltage-sensing contacts, sep...
Description	NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
File Size	114.07K / 5 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	BUX48C BUV48C BUV48CFI
OCR Text	... C D E G N P R U V 11.00 0.97 1.50 8.32 19.00 10.70 16.50 25.00 4.00 38.50 30.00 TYP. MAX. 13.10 1.15 1.65 8.92 20.00 11.10 17.20 26.00 4.09 39.30 30.30 MIN. 0.433 0.038 0.059 0.327 0.748 0.421 0.649 0.984 0.157 1.515 1.187 inch TYP. MAX. 0...
Description	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS
File Size	47.06K / 6 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	C67070-A2701-A67 050B17N2 BSM50GB170DN2
OCR Text	50 GB 170 DN2 IGBT Power Module Preliminary data * Half-bridge * Including fast free-wheeling diodes * Package with insulated metal base ...tp = 1 ms ICpuls 144 100 TC = 25 C TC = 80 C Power dissipation per IGBT Ptot 500 W + ...
Description	IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) IGBT功率模块（半桥包括快速续流二极管的绝缘金属基片包 From old datasheet system
File Size	111.79K / 9 Page	View it Online	Download Datasheet

				Shindengen Electric Mfg... SHINDENGEN[Shindengen Electric Mfg.Co.Ltd] Shindengen Electric Manufacturing Company, Ltd.
Part No.	D2SB60L
OCR Text	...0 1 2 5 10 20 50 100 Number of Cycles [cycles]
Description	General Purpose Rectifiers(600V 1.5A)
File Size	133.44K / 5 Page	View it Online	Download Datasheet

				DYNEX[Dynex Semiconductor]
Part No.	DCR806SG27 DCR806SG28 DCR806SG DCR806SG24 DCR806SG25 DCR806SG26
OCR Text	...s half sine; Tcase = 125oC VR = 50% VRRM - 1/4 sine 10ms half sine; Tcase = 125oC VR = 0 Max. 9.0 405 x 103 11.25 633 x 103 Units kA A2s kA ...tp = 1ms, Tj = 125C, VR = 50V, dIRR/dt = 20A/s, VDR = 67% VDRM, dVDR/dt = 20V/s linear Tj = 25oC, V...
Description	Phase Control Thyristor
File Size	114.80K / 8 Page	View it Online	Download Datasheet

				Dynex Semiconductor Ltd. DYNEX[Dynex Semiconductor]
Part No.	DCR818SG47 DCR818SG46 DCR818SG48 DCR818SG DCR818SG44 DCR818SG45
OCR Text	...s half sine; Tcase = 125oC VR = 50% VRRM - 1/4 sine 10ms half sine; Tcase = 125oC VR = 0 Max. 6.0 0.18 x 106 7.5 0.28 x 106 Units kA A2s kA ...tp = 1ms, Tj = 125C, Turn-off time VRM = 100V, dIRR/dt = 10A/s, dVDR/dt = 20V/s to 3000V 450 - G...
Description	Phase Control Thyristor
File Size	108.66K / 8 Page	View it Online	Download Datasheet

				??????浣? STMICROELECTRONICS[STMicroelectronics] ST Microelectronics SGS Thomson Microelectronics
Part No.	ESDA14V2SC6 ESDA6V1SC5 ESDA6V1SC6 ESDA5V3SC5 ESDA5V3SC6 ESDAXXSC6 ESDA14V2SC5 ESDA25SC6 ESDAXXSC5 ESDA14V2
OCR Text	...itial(C) tp(s) 0 25 50 75 100 125 150 100 1 10 100 Fig. 3: Clamping voltage versus peak pulse current (Tj initial = 25 C). Rectangular waveform tp = 2.5 s. Ipp(A) 50.0 10.0 ESDA25SC5/SC6 ESDA14V2SC5/...
Description	QUAD TRANSIL ARRAY FOR ESD PROTECTION DUAL TRANSIL ARRAY FOR ESD PROTECTION
File Size	68.34K / 7 Page	View it Online	Download Datasheet

				Hi-Sincerity Microelectronics HSMC[Hi-Sincerity Mocroelectronics] Hi-Sincerity Mocroelect...
Part No.	HBAT54C HBAT54S HBAT54A HBAT54
OCR Text	...Current-IF (mA) 10 100 50 0 1 0.1 1 10 100 Forward Voltage-VF (mV) Reverse Biased Voltage-VR (V) HBAT54, HBAT54A, HBAT54C, HBAT54S HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. SOT-23 Dimensi...
Description	Silicon Schottky Barrier Double Diodes
File Size	22.64K / 3 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR
OCR Text	... Max. 84 59 330 200 1.4 20 50 17 4.0 -55 to + 175 300 (1.6mm from case ) 10 lbfin (1.1Nm) Units A W W/C V A mJ V/ns C Thermal ...tp 0 .0 1 + - VD D A 400 Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp ...
Description	60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 60V Single N-Channel HEXFET Power MOSFET in a TO-262 package Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=84A) Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A) Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?) Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?
File Size	122.02K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1010E
OCR Text	...ipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance th...tp 0 .0 1 + - VD D A 400 Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp ...
Description	Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?
File Size	143.91K / 8 Page	View it Online	Download Datasheet

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