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4banks Datasheet PDF File

For 4banks Found Datasheets File :: 1003 Search Time::1.406ms
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				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S641632F-TL55 K4S641632F-TL70 K4S641632F-TC70 K4S641632F-TC60 K4S641632F-TC75 K4S641632F-TL75 K4S641632F K4S641632F-TC1H K4S641632F-TC1L K4S641632F-TC50 K4S641632F-TC55 K4S641632F-TL1H K4S641632F-TL1L K4S641632F-TL50 K4S641632F-TL60
OCR Text	...are stable IO = 0 mA Page burst 4banks Activated tCCD = 2CLKs tRC tRC(min) CKE 0.2V C L Operating current (Burst mode) Refresh current Self refresh current ICC4 180 170 160 140 135 110 110 mA 1 ICC5 ICC6 180 170 160 140 ...
Description	RF CONNECTOR; FME PLUG, CRIMP ATTACHMENT FOR RG58 RF CONNECTOR; 75 OHM MCX JACK, SURFACE MOUNT Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 8-CDIP -55 to 125 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
File Size	132.29K / 11 Page	View it Online	Download Datasheet

				Samsung semiconductor Samsung Electronic
Part No.	K4S641632H-TL70 K4S641632H-TC70 K4S641632H-TC75 K4S641632H-TC60 K4S640832H-TC75 K4S641632H-L60 K4S640432H-TC K4S640432H-TC75 K4S640432H-L75 K4S640832H-L75 K4S641632H-L70 K4S641632H-L75 K4S640432H-TL75 K4S640832H-TL75 K4S641632H-TL60 K4S641632H-TL75
OCR Text	...are stable IO = 0 mA Page burst 4banks Activated tCCD = 2CLKs tRC tRC(min) CKE 0.2V C L Version 75 75 1 1 15 CMOS SDRAM Unit Note ICC1 ICC2P ICC2PS ICC2N ICC2NS ICC3P ICC3PS ICC3N ICC3NS mA mA 1 mA 6 3 3 30 mA 25 mA ...
Description	64Mb H-die SDRAM Specification
File Size	142.04K / 14 Page	View it Online	Download Datasheet

				Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
Part No.	HY57V651620BLTC-6 HY57V651620BTC-6 HY57V651620BLTC-55 HY57V651620BLTC-7 HY57V651620BLTC-75 HY57V651620BLTC-8 HY57V651620B HY57V651620BLTC-10 HY57V651620BLTC-10P HY57V651620BLTC-10S HY57V651620BTC-10 HY57V651620BTC-10P HY57V651620BTC-55 HY57V651620BTC-10S HY57V651620BTC-8 HY57V651620BTC-7 HY57V651620BTC-75
OCR Text	.... HY57V641620HG is organized as 4banks of 1,048,576x16. H Y 5 7 V 6 4 1 6 2 0 H G i s o f f e r i n g f u l l y s y n c h r o n o u s o p e r a t i o n r e f e r e n c e d t o a p o s i t i v e e d g e o f t h e c l o c k . A l l i n p u t ...
Description	CABLE ASSEMBLY; SMA MALE TO SMA FEMALE BULKHEAD; 50 OHM, RG223/U COAX, DOUBLE SHIELDED; 4 Banks x 1M x 16Bit Synchronous DRAM
File Size	80.11K / 12 Page	View it Online	Download Datasheet

				Hynix Semiconductor, Inc. Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
Part No.	HY57V653220BTC-6 HY57V653220BTC HY57V653220BTC-10 HY57V653220BTC-10P HY57V653220BTC-5 HY57V653220BTC-55 HY57V653220BTC-7 HY57V653220BTC-8
OCR Text	...h. HY57V653220B is organized as 4banks of 524,288x32. HY57V653220B is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data...
Description	4 Banks x 512K x 32Bit Synchronous DRAM 2M X 32 SYNCHRONOUS DRAM, 6 ns, PDSO86
File Size	152.09K / 12 Page	View it Online	Download Datasheet

				Samsung semiconductor
Part No.	K4T51043Q K4T51043QB-GCCC K4T51043QB-GCD5 K4T51043QB-ZCCC K4T51043QB-ZCD5 K4T51083QB-GCCC K4T51083QB-GCD5 K4T51083QB-ZCCC K4T51083QB-ZCD5 K4T51163QB-ZCD5
OCR Text	...Os x 4 banks, 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 533Mb/sec/pin (DDR2-533) for general applications. The chip is designed to comp...
Description	512Mb B-die DDR2 SDRAM
File Size	504.88K / 29 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	KM416S8030B KM416S8030BT-G_F8 KM416S8030BT-G_FH KM416S8030BT-G_FL KM416S8030BT-G_F10 KM416S8030BT-G_FA KM416S8030BT-G/F10 KM416S8030BT-G/F8 KM416S8030BT-G/FA KM416S8030BT-G/FH KM416S8030BT-G/FL
OCR Text	...are stable IO = 0 mA Page burst 4banks Activated tCCD = 2CLKs tRC tRC(min) CKE 0.2V G F mA Operating current (Burst mode) Refresh current Self refresh current ICC4 180 170 145 145 145 mA 1 ICC5 ICC6 220...
Description	128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
File Size	132.04K / 11 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S561632A K4S561632A-TC_L1H K4S561632A-TC_L1L K4S561632A-TC_L75 K4S561632A-TC_L80 K4S561632A-TC/L1H K4S561632A-TC/L1L K4S561632A-TC/L75 K4S561632A-TC/L80
OCR Text	...are stable IO = 0 mA Page burst 4banks Activated. tCCD = 2CLKs tRC tRC(min) CKE 0.2V C L Notes : 1. Measured with outputs open. 2. Refresh period is 64ms. 3. K4S561632A-TC 4. K4S561632A-TL 5. Unless otherwise noticed, input swing leve...
Description	256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL
File Size	125.82K / 10 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S561632B K4S561632B-TC_L1L K4S561632B-TC_L1H K4S561632B-TC_L75 K4S561632B-TC/L1L K4S561632B-TC/L75 K4S561632B-TC/L1H
OCR Text	...are stable IO = 0 mA Page burst 4banks Activated. tCCD = 2CLKs tRC tRC(min) CKE 0.2V C L Notes : 1. Measured with outputs open. 2. Refresh period is 64ms. 3. K4S561632B-TC 4. K4S561632B-TL 5. Unless otherwise noticed, input swing leve...
Description	256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL 56Mbit SDRAM米16 × 4银行同步DRAM LVTTL
File Size	130.19K / 11 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S561632D K4S561632D-TC_L75 K4S561632D-TC_L1H K4S561632D-TC_L1L K4S561632D-TC_L60 K4S561632D-TC_L7C K4S561632D-TC/L1H K4S561632D-TC/L1L K4S561632D-TC/L60 K4S561632D-TC/L75 K4S561632D-TC/L7C K4S561632D-TC75000
OCR Text	...are stable IO = 0 mA Page burst 4banks Activated. tCCD = 2CLKs tRC tRC(min) CKE 0.2V C L Notes : 1. Measured with outputs open. 2. Refresh period is 64ms. 3. K4S561632D-TC 4. K4S561632D-TL 5. Unless otherwise noticed, input swing leve...
Description	256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL
File Size	59.61K / 11 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K4S561633C-N K4S561633C-P1H K4S561633C-P1L K4S561633C-P75 K4S561633C-RBL K4S561633C-RL K4S561633C-RL75
OCR Text	...are stable IO = 0 mA Page burst 4banks Activated tCCD = 2CLKs tRC tRC (min) -R(B)L Self Refresh Current ICC6 CKE 0.2V -R(B)N -R(B)P Notes : 1. Measured with outputs open. 2. Refresh period is 64ms. 3. K4S561633C-R(B)L** 4. K4S561633C-R(B)...
Description	From old datasheet system IC,SDRAM,4X4MX16,CMOS,BGA,54PIN,PLASTIC 16Mx16 SDRAM 54CSP 16Mx16显示内存54CSP
File Size	58.25K / 8 Page	View it Online	Download Datasheet

For 4banks Found Datasheets File :: 1003 Search Time::1.406ms
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