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Infineon
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| Part No. |
HYS72D16000GR-8-A HYS72D16000GR-7-A HYS72D32001GR-8-A
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| OCR Text |
....35 mm (nom.) 43.18 mm (nom.) 4.00 mm (max.) (6,80 mm max. with stacked components) jedec standard reference layout: raw cards a, b and c gold plated contacts performance: -7 -8 unit component speed grade ddr266a ddr200 module speed... |
| Description |
128 MB 16M x 72 PC1600 Registered DIM...
128 MB 16M x 72 PC2100 Registered DIM...
256 MB 32M x 72 PC1600 Registered DIM...
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| File Size |
184.46K /
18 Page |
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Mitsubishi
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| Part No. |
MH64S72QJA-8
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| OCR Text |
4,831,838,208-BIT ( 67,108,864-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
PRELIMINARY
Some of contents are subject to change w ithout noti...8
100MHz 100MHz
6ns 6ns
6ns 6ns
Utilizes industry standard 32M X 4 Synchronous DRAMs in ... |
| Description |
4 /831 /838 /208-BIT ( 67 /108 /864-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
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| File Size |
984.13K /
56 Page |
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Mitsubishi Electric Corporation
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| Part No. |
MH16S64BAMD-8 MH16S64BAMD-10
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| OCR Text |
...e without notice. mit-ds-0212-0.4 description the mh16s64bamd is 16777216 word x 64 bit synchronous dram module. this consists of sixteen i...8/full page(programmable) 4 bank operation controlled by ba0,1(bank address) /cas latency- 2/3(progr... |
| Description |
1073741824-BIT (16777216 - WORD BY 64-BIT)SynchronousDRAM
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| File Size |
619.36K /
55 Page |
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Mitsubishi Electric Corporation
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| Part No. |
MH16S64DAMD-8 MH16S64DAMD-6 MH16S64DAMD-7
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| OCR Text |
... rising edge burst length- 1/2/4/8/full page(programmable) 4 bank operation controlled by ba0,1(bank address) /cas latency- 2/3(programmable) application pc main memory auto precharge / all bank precharge controlled by a10 burst type- seq... |
| Description |
1073741824-BIT (16777216 - WORD BY 64-BIT)Synchronous DRAM
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| File Size |
757.34K /
55 Page |
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Mitsubishi Electric Corporation
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| Part No. |
MH16S72BAMD-8 MH16S72BAMD-10
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| OCR Text |
...e without notice. mit-ds-0221-0.4 description the mh16s72bamd is 16777216 - word by 72-bit synchronous dram module. this consists of eighte...8/full page(programmable) 4 bank operation controlled by ba0,1(bank address) /cas latency- 2/3(progr... |
| Description |
1207959552-BIT (16777216 - WORD BY 72-BIT)SynchronousDRAM
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| File Size |
620.50K /
55 Page |
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it Online |
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Mitsubishi Electric Corporation
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| Part No. |
MH16S72DAMD-8 MH16S72DAMD-6 MH16S72DAMD-7
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| OCR Text |
... rising edge burst length- 1/2/4/8/full page(programmable) 4 bank operation controlled by ba0,1(bank address) /cas latency- 2/3(programmable) application pc main memory auto precharge / all bank precharge controlled by a10 burst type- sequ... |
| Description |
1207959552-BIT (16777216 - WORD BY 72-BIT)Synchronous DRAM
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| File Size |
762.43K /
55 Page |
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HYNIX SEMICONDUCTOR INC
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| Part No. |
HYM71V16655ALT8M-8
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| OCR Text |
4 banks & 4k refresh this document is a general product description and is subject to change without notice. hynix semiconductor inc. does ...8 or full page for sequential burst - 1, 2, 4 or 8 for interleave burst ? programmable cas latency... |
| Description |
16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
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| File Size |
233.13K /
14 Page |
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it Online |
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Price and Availability
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