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Infineon
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Part No. |
SPP11N65C3
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OCR Text |
... p limited by t jmax i d puls 33 33 a avalanche energy, single pulse i d =2.5a, v dd =50v e as 340 340 mj avalanche energy, repetitive t...40mm*40mm*1.5mm epoxy pcb fr4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. p... |
Description |
for lowest Conduction Losses & fastest Switching
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File Size |
255.50K /
14 Page |
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Download Datasheet |
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Infineon Technologies A...
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Part No. |
IPN80R2K0P7
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OCR Text |
..., v gs =13v, i d =0.94a, r g =33 w rise time t r - 8 - ns v dd =400v, v gs =13v, i d =0.94a, r g =33 w turn-off delay time t d(off) - 40 - ns v dd =400v, v gs =13v, i d =0.94a, r g =33 w fall time t f - 20 - ns v dd =400v, v gs =13v,... |
Description |
800V CoolMOSa P7 Power Transistor
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File Size |
1,239.10K /
13 Page |
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Download Datasheet |
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Infineon Technologies A... INFINEON[Infineon Technologies AG]
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Part No. |
SPP47N10 SPB47N10 SPI47N10
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OCR Text |
...duct Summary VDS RDS(on) ID 100 33 47
P-TO220-3-1
V m A
Type SPP47N10 SPB47N10 SPI47N10
Package P-TO220-3-1 P-TO263-3-2 P-...40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB... |
Description |
SIPMOS Power-Transistor Low Voltage MOSFETs - Power MOSFET, 100V, DPAK, RDSon=33mOhm, 47A, NL Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=33mOhm, 47A, NL
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File Size |
509.17K /
8 Page |
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it Online |
Download Datasheet |
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INFINEON[Infineon Technologies AG]
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Part No. |
BSO612CV
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OCR Text |
...V, VGS = 10 V, ID = 3 A , R G = 33 VDD = -30 V, V GS = -10 V, ID = -2 A , R G = 27
Rise time
tr
N P -
VDD = 30 V, VGS = 10 V, ID = 3 A, R G = 33 VDD = -30 V, V GS = -10 V, ID = -2 A, RG = 27
Turn-off delay time
td(off)
N P ... |
Description |
Low Voltage MOSFETs - SIPMOS, Complementary, 60V, SO-8, RDSon(N/P) = 0.12/0.30Ohm, Id(N) = 3.1A, Id(P) = -2.0A, NL SIPMOS Small-Signal-Transistor
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File Size |
155.39K /
13 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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