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  2banks Datasheet PDF File

For 2banks Found Datasheets File :: 160    Search Time::1.359ms    
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    HY57V161610D HY57V161610DTC-10 HY57V161610DTC-5 HY57V161610DTC-55 HY57V161610DTC-7 HY57V161610DTC-8 HY57V161610DTC-15 HY

Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
Part No. HY57V161610D HY57V161610DTC-10 HY57V161610DTC-5 HY57V161610DTC-55 HY57V161610DTC-7 HY57V161610DTC-8 HY57V161610DTC-15 HY57V161610DTC-6 HY57V161610DTC-10I HY57V161610DTC-6I HY57V161610DTC-55I HY57V161610DTC-7I
OCR Text ...h. HY57V161610D is organized as 2banks of 524,288x16. HY57V161610D is offering fully synchronous operation referenced to a positive edge clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths ...
Description 2 Banks x 512K x 16 Bit Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50
2 Banks x 512K x 16 Bit Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO50
SDRAM - 16Mb

File Size 171.73K  /  13 Page

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    Hynix
Part No. HY57V161610DTC-8
OCR Text ...h. HY57V161610D is organized as 2banks of 524,288x16. HY57V161610D is offering fully synchronous operation referenced to a positive edge clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths ...
Description SDRAM
From old datasheet system

File Size 70.76K  /  11 Page

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    K4S161622H

Samsung semiconductor
Part No. K4S161622H
OCR Text ...are stable Io = 0 mA Page Burst 2banks Activated tCCD = 2CLKs tRCtRC(min) CKE0.2V 155 105 150 100 1 120 60 115 2 mA 2 15 mA 5 3 mA 3 25 mA 70 105 80 95 mA 2 Unit Note Active Standby Current in non power-down mode (One Bank Active) ICC...
Description 16Mb H-die SDRAM Specification
IC,SDRAM,2X512KX16,CMOS,TSOP,50PIN,PLASTIC

File Size 106.76K  /  11 Page

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    SAMSUNG
Part No. KM416S1020 KM416S1020CT-F10
OCR Text ...re stable IOL = 0 mA Page Burst 2banks Activated tCCD = 2CLKs tRCtRC(min) 2 Self Refresh Current ICC6 CKE0.2V 250 Note : 1. Measured with outputs open. Addresses are changed only one time during tcc(min). 2. Refresh period is 64ms. Addresse...
Description 1M x 16 SDRAM

File Size 1,093.83K  /  43 Page

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    K4S641632C-TC_L10 K4S641632C-TC_L1H K4S641632C-TC_L1L K4S641632C-TC_L60

Samsung semiconductor
Part No. K4S641632C-TC_L10 K4S641632C-TC_L1H K4S641632C-TC_L1L K4S641632C-TC_L60
OCR Text ...re stable IOL = 0 mA Page burst 2banks activated tCCD = 2CLKs tRC tRC(min) CKE 0.2V mA Active standby current in non power-down mode (One bank active) Operating current (Burst mode) Refresh current Self refresh current ICC4 ...
Description 1M x 16Bit x 4 Banks Synchronous DRAM

File Size 778.45K  /  42 Page

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    KMM366S1623CTY-GL KMM366S1623CTY KMM366S1623CTY-GH

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. KMM366S1623CTY-GL KMM366S1623CTY KMM366S1623CTY-GH
OCR Text ...re stable IOL = 0 mA Page burst 2banks activated tCCD = 2CLKs tRC tRC(min) CKE 0.2V 3 2 760 760 mA 96 32 32 320 160 760 mA 720 2,000 16 mA mA 2 1 mA mA mA Operating current (Burst mode) Refresh current Self refresh current ICC...
Description PC100 SDRAM MODULE

File Size 170.55K  /  12 Page

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    K4S641632C K4S641632C-TC_L70 K4S641632C-TC_L80 K4S641632C-TC_L75 K4S641632C-TC/L10 K4S641632C-TC/L1H K4S641632C-TC/L1L K

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4S641632C K4S641632C-TC_L70 K4S641632C-TC_L80 K4S641632C-TC_L75 K4S641632C-TC/L10 K4S641632C-TC/L1H K4S641632C-TC/L1L K4S641632C-TC/L70 K4S641632C-TC/L80 K4S641632C-TC/L60 K4S641632C-TC/L75 K4S641632C-TL60 K4S641632C-TC80
OCR Text ...re stable IOL = 0 mA Page burst 2banks activated tCCD = 2CLKs tRC tRC(min) CKE 0.2V mA Active standby current in non power-down mode (One bank active) Operating current (Burst mode) Refresh current Self refresh current ICC4 ...
Description 64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz
1M x 16Bit x 4 Banks Synchronous DRAM
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 166MHz

File Size 1,152.92K  /  42 Page

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    Samsung
Part No. KM416S4030B
OCR Text ...re stable IOL = 0 mA Page burst 2banks activated tCCD = 2CLKs tRC tRC(min) CKE 0.2V 3 2 145 115 125 125 150 CAS Latency CMOS SDRAM Version -8 110 -H 100 1 1 20 -L 100 -10 95 Unit Note Operating current (One bank active) Pre...
Description CMOS SDRAM
From old datasheet system

File Size 124.18K  /  11 Page

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    K4S161622D-TC_L10 K4S161622D-TC_L55 K4S161622D-TC_L60 K4S161622D-TC_L70 K4S161622D-TC_L80

Samsung semiconductor
Part No. K4S161622D-TC_L10 K4S161622D-TC_L55 K4S161622D-TC_L60 K4S161622D-TC_L70 K4S161622D-TC_L80
OCR Text ...are stable Io = 0 mA Page Burst 2banks Activated tCCD = 2CLKs 3 2 3 Refresh Current ICC5 tRCtRC(min) 2 Self Refresh Current ICC6 CKE0.2V 155 105 150 100 CAS Latency 3 2 CMOS SDRAM Version Unit Note -55 120 -60 115 -70 105 110 2 mA 2 1...
Description 512K x 16Bit x 2 Banks Synchronous DRAM

File Size 746.48K  /  41 Page

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    Nanya Technology
Part No. NT56V1616A0T
OCR Text ...3 MHz 125 MHz CL 3 3 tAC 5.5 ns 2banks x 512Kbits x 16 6 ns LVTTL Organization Interface Package 400mil 50pin TSOP II REV 1.2 , AUG. 2000 3 (c)NA NYA TECHNOLOGY CORP. NANYA TECHNOLOGY CORP. reserves the right to change Products and S...
Description 1M x 16 SDRAM

File Size 730.34K  /  33 Page

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For 2banks Found Datasheets File :: 160    Search Time::1.359ms    
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