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  20v Datasheet PDF File

For 20v Found Datasheets File :: 42514    Search Time::2ms    
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    SPP6307S36RGB

SYNC POWER Crop.
Part No. SPP6307S36RGB
OCR Text ...ion( sot-363 ) ? p-channel -20v/0.45a,r ds(on) = 0.65 ? @v gs =-4.5v -20v/0.35a,r ds(on) = 0.90 ? @v gs =-2.5v -20v/0.25a,r ds(on) = 1.5 ? @v gs =-1.8v ? super high density cell design for extremely low rds (on) ? exceptional o...
Description P-Channel Enhancement Mode MOSFET

File Size 209.88K  /  8 Page

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    PRHMB600E6 PRHMB600E6C

Nihon Inter Electronics Corporation
Part No. PRHMB600E6 PRHMB600E6C
OCR Text ...e-mitter eakage urrent = 20v, = 0v . ? ????g??R ollector-mitter aturation oltage = 600a, = 15v . . ` R ate-mitter hreshold oltage h = 5v, = 600ma . . ...
Description IGBT Module-Dual

File Size 283.61K  /  4 Page

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    PRHMB200E6

Nihon Inter Electronics Corporation
Part No. PRHMB200E6
OCR Text ...e-mitter eakage urrent = 20v, = 0v . ? ????g??R ollector-mitter aturation oltage = 200a, = 15v . . ` R ate-mitter hreshold oltage h = 5v, = 200ma . . ...
Description IGBT Module-Dual

File Size 247.67K  /  4 Page

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    PMDPB70XPE

NXP Semiconductors
Part No. PMDPB70XPE
OCR Text ...rain-source voltage t j =25c ---20v v gs gate-source voltage -12 - 12 v i d drain current v gs =-4.5v; t amb =25c; t 5 s [1] ---4.2a static characteristics (per transistor) r dson drain-source on-state resistance v gs =-4.5v; i d =-2a; ...
Description 20 V dual P-channel Trench MOSFET

File Size 823.97K  /  15 Page

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    PMDPB55XP

NXP Semiconductors
Part No. PMDPB55XP
OCR Text ...rain-source voltage t j =25c ---20v v gs gate-source voltage -12 - 12 v i d drain current v gs =-4.5v; t amb =25c; t 5 s [1] ---4.5a static characteristics (per transistor) r dson drain-source on-state resistance v gs =-4.5v; i d =-3.4a...
Description 20 V, dual P-channel Trench MOSFET

File Size 864.00K  /  15 Page

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    MP6903 MP6903DS

Monolithic Power Systems
Part No. MP6903 MP6903DS
OCR Text ... 260 shutdown current v dd =20v, en=0v 350 420 a light-load mode current 290 400 a thermal shutdown (5) 170 180 190 c thermal shutdown hysteresis (5) 30 40 50 c enable uvlo rising 1.1 1.5 1.9 v enabl...
Description Fast Turn-off Intelligent Controller

File Size 315.82K  /  10 Page

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    IRHF7330SE

International Rectifier
Part No. IRHF7330SE
OCR Text ...e leakage forward 100 v gs = 20v i gss gate-to-source leakage reverse -100 v gs = -20v q g total gate charge 41 v gs = 12v, i d = 3.0a q gs gate-to-source charge 7.0 nc v ds = max rating x 0.5 q gd gate-to-drain (miller) charge...
Description N-Channel Single Event Effect (SEE) Rad Hard HEXFET Transistor(N 娌?? ???浠舵?搴?Rad Hard HEXFET????朵?绠々

File Size 94.41K  /  8 Page

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    Infineon Technologies
Part No. H15R1203
OCR Text ...rent i ges v ce =0v, v ge =20v - - 100 na transconductance g fs v ce =20v, i c =15.0a - 13.9 - s integrated gate resistor r g none w electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. param...
Description Reverse conducting IGBT

File Size 2,224.03K  /  15 Page

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    AP6900GSM

Advanced Power Electronics Corp.
Part No. AP6900GSM
OCR Text ... gss gate-source leakage v gs =20v - - 100 na q g total gate charge 2 i d =6a - 9 15 nc q gs gate-source charge v ds =24v - 2 - nc q gd gate-drain ("miller") charge v gs =4.5v - 6 - nc t d(on) turn-on delay time 2 v ds =15v - 8 - ns t r ri...
Description Simple Drive Requirement, DC-DC Converter Suitable

File Size 131.49K  /  9 Page

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