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  193a Datasheet PDF File

For 193a Found Datasheets File :: 27    Search Time::1.719ms    
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    MR3227-D

ON Semiconductor
Part No. MR3227-D
OCR Text ... p suffix (cathode to cup) case 193a http://onsemi.com mr3227n button can 5000 units/box mr3227p button can 5000 units/box marking diagram nl = location code 3n or 3p = device code and polarity yy = year ww = work week ### = assembly lot nu...
Description Automotive Transient Voltage Suppressor 20 V - 27 V

File Size 47.52K  /  4 Page

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    MR4027-D

ON Semiconductor
Part No. MR4027-D
OCR Text ... p suffix (cathode to cup) case 193a http://onsemi.com mr4027n button can 5000 units/box mr4027p button can 5000 units/box marking diagram nl = location code 1n or 1p = device code and polarity yy = year ww = work week ### = assembly lot nu...
Description Automotive Transient Voltage Suppressor 20 V - 27 V

File Size 51.20K  /  4 Page

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    FDB029N06

Fairchild Semiconductor
Part No. FDB029N06
OCR Text ...nnel powertrench ? mosfet 60v, 193a, 3.1m w features ? r ds(on) = 2.4m w ( typ.)@ v gs = 10v, i d = 75a ? fast switching speed ? low gate charge ? high performance trench technology for extremely lo w r ds(on) ? high power and c...
Description N-Channel PowerTrench MOSFET

File Size 538.49K  /  8 Page

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    APT64GA90B APT64GA90S

Microsemi Corporation
Part No. APT64GA90B APT64GA90S
OCR Text ... Ratings 900 117 64 193 30 500 193a @ 900V -55 to 150 300 Unit V A V W C Static Characteristics Symbol VBR(CES) VCE(on) VGE(th) ICES IGES TJ = 25C unless otherwise specified Test Conditions VGE = 0V, IC = 1.0mA VGE =...
Description High Speed PT IGBT

File Size 196.62K  /  6 Page

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    NTE192 NTE193A NTE192A NTE193

NTE[NTE Electronics]
Part No. NTE192 NTE193a NTE192A NTE193
OCR Text .../193 1 C 2 B C 3 E E NTE192A/193a B
Description 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO92HS
Silicon Complementary Transistors Audio Power Output

File Size 21.56K  /  2 Page

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    Microsemi, Corp.
Part No. APT64GA90LD30
OCR Text ...fe operating area @ t j = 150c 193a @ 900v t j , t stg operating and storage junction temperature range -55 to 150 c t l lead temperature for soldering: 0.063" from case for 10 seconds 300 combi (igbt and diode) typical applications ? zvs...
Description Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-264; BV(CES) (V): 900; VCE(sat) (V): 3.1; IC (A): 64; 117 A, 900 V, N-CHANNEL IGBT, TO-264AA

File Size 227.89K  /  9 Page

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    AUIRFS8405 AUIRFS8405TRL AUIRFS8405TRR AUIRFSL8405

International Rectifier
Part No. AUIRFS8405 AUIRFS8405TRL AUIRFS8405TRR AUIRFSL8405
OCR Text .... 2.3m ? i d (silicon limited) 193a
Description Advanced Process Technology New Ultra Low On-Resistance

File Size 365.48K  /  14 Page

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