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INTERSIL[Intersil Corporation]
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| Part No. |
HGTP2N120CN HGT1S2N120CNS HGTD2N120CNS
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| OCR Text |
...perature for Soldering Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Pac...13A at 1200V 104 0.83 18 -55 to 150 300 260 8
UNITS V A A A V V W W/oC mJ oC
oC oC
s
CAUTI... |
| Description |
13A/ 1200V/ NPT Series N-Channel IGBT
13A, 1200V, NPT Series N-Channel IGBT
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| File Size |
88.44K /
7 Page |
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Micross Components
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| Part No. |
ICE60N150
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| OCR Text |
...a 650v min r ds(on) v gs = 10v 0.13? typ q g v ds = 480v 85nc typ micross components ltd, united kingdom, tel: +44 1603 788967, fax: +44 1...13a, t j = 25c - 0.40 - v gs = 10v, i d = 13, t j = 150c r gs gate resistance - 4 - ? f = 1 mhz... |
| Description |
N-Channel Enhancement Mode MOSFET
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| File Size |
758.79K /
4 Page |
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it Online |
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Micross Components
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| Part No. |
ICE60N150FP
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| OCR Text |
...a 650v min r ds(on) v gs = 10v 0.13? typ q g v ds = 480v 85nc typ micross components ltd, united kingdom, tel: +44 1603 788967, fax: +44 1...13a, t j = 25c - 0.40 - v gs = 10v, i d = 13a, t j = 150c r gs gate resistance - 4 - ? f = 1 mh... |
| Description |
N-Channel Enhancement Mode MOSFET
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| File Size |
757.96K /
4 Page |
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it Online |
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MagnaChip
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| Part No. |
MDP13N50
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| OCR Text |
0 magnachipsemiconductorltd . 1 mdp13n50nchannelmosfet50...13a,v gs =10v (3) 13 nc inputcapacitance c iss 1390 reversetransfercapacitance c rss 6.3... |
| Description |
N-Channel MOSFET
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| File Size |
862.76K /
6 Page |
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it Online |
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Intersil, Corp.
INTERSIL[Intersil Corporation]
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| Part No. |
HGTP2N120CND HGT1S2N120CNDS
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| OCR Text |
...perature for Soldering Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Pac...13A at 1200V 104 0.83 -55 to 150 300 260 8 UNITS V A A A V V W W/oC oC
oC oC
s
CAUTION: Stres... |
| Description |
13A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes 13 A, 1200 V, N-CHANNEL IGBT, TO-263AB
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| File Size |
91.92K /
7 Page |
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it Online |
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FAIRCHILD SEMICONDUCTOR CORP
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| Part No. |
BSS110D74Z BSS110D27Z BSS110D26Z
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| OCR Text |
...continuous @ t a = 30/35 o c -0.13 -0.17 a - pulsed @ t a = 2 5 o c -0.52 -0.68 p d maximum power dissipa...13a, -50v. r ds(on ) = 10 w @ v gs = -5v. bss110: -0.17a, -50v. r ds(on ) = 10 w @ v gs = -10... |
| Description |
170 mA, 50 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
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| File Size |
145.34K /
7 Page |
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http://
FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQI13N50C FQB13N50C FQI13N50CTU
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| OCR Text |
... * * * * * 13A, 500V, RDS(on) = 0.48 @VGS = 10 V Low gate charge ( typical 43nC) Low Crss ( typical 20pF) Fast switching 100% avalanche tested Improved dv/dt capability
D D
!
"
G
S
D2-PAK
FQB Series
I2-PAK
GDS
FQI Series... |
| Description |
500V N-Channel MOSFET
500V N-Channel Advance Q-FET C-Series
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| File Size |
644.67K /
9 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDZ206P
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| OCR Text |
...* Ultra-thin package: less than 0.80 mm height when mounted to PCB * 0.65 mm ball pitch * 3.5 x 4 mm2 footprint * High power and current han...13A, Diode Reverse Recovery Charge diF/dt = 100 A/s
(Note 2)
-0.7 34 38
-1.8 -1.2
a)
56... |
| Description |
P-Channel 2.5V Specified PowerTrench
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| File Size |
215.92K /
5 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
CPV364MK
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| OCR Text |
...ly Voltage 360Vdc, Power Factor 0.8, Modulation Depth 80% (See Figure 1) 19
Description
The IGBT technology is the key to International ...13A V GE = 15V -- 2.6 -- V IC = 24A See Fig. 2, 5 -- 2.2 -- IC = 13A, T J = 150C 3.0 -- 5.5 VCE = VG... |
| Description |
IGBT SIP MODULE Short Circuit Rated UltraFast IGBT
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| File Size |
403.85K /
8 Page |
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it Online |
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Price and Availability
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