...1 50
ADS6616A4A
Unit V V w mA
Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATING are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended volt...
...1 50
ADS6632A4A
Unit V V w mA
Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATING are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended volt...
...1 50
ADS7608A4A
Unit V V w mA
Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATING are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended volt...
Description
Synchronous DRAM(4M X 8 Bit X 4 Banks) Synchronous DRAM(4M X 8 Bit X 4 Banks) 同步DRAM4米8位4银行 Synchronous DRAM(4M X 8 Bit X 4 Banks) 同步DRAM米8位4银行 133 Mhz LVTTL synchronous DRAM, 4 M x 8 bit x 4 banks
...1 50
ADS7616A4A
Unit V V w mA
Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATING are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended volt...
Description
Synchronous DRAM(2M X 16 Bit X 4 Banks) Synchronous DRAM(2M X 16 Bit X 4 Banks) 同步DRAM米16位4个银行)