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Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
KEC Holdings
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| Part No. |
KDR411
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| OCR Text |
usm)
A
E M B
KDR411
SCHOTTKY BARRIER TYPE DIODE
M D 3
Low Forward Voltage : VF max=0.5V High Reliability
2
1
CONSTRUCTION
Silicon epitaxial planar.
C
H N K N
DIM A B C D E G H J K L M N
MILLIMETERS _ 2.00 + 0.2... |
| Description |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(LOW PWER RECTIFICATION, FOR SWITCHING POWER SUPPLY)
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| File Size |
382.08K /
2 Page |
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it Online |
Download Datasheet
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| Part No. |
KDS121
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| OCR Text |
...ckage : usm. ? low forward voltage : v f =0.9v (typ.). ? fast reverse recovery time : t rr =1.6ns(typ.). ? small total capacitance : c t =0.9pf (typ.). maximum rating (ta=25 ? ) dim millimeters ... |
| Description |
0.1 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE
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| File Size |
35.65K /
2 Page |
View
it Online |
Download Datasheet |
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NEC[NEC]
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| Part No. |
2SK2552B
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| OCR Text |
...lephone * Small package: SC-75 (usm)
0.8 0.1
FEATURES
3
0 to 0.1
2
0.2 +0.1 -0 0.5 TYP. 0.5 TYP.
1
0.6 TYP. 0.75 0.05
1.0 TYP. 1.6 0.1
ORDERING INFORMATION
PART NUMBER 2SK2552B PACKAGE SC-75 (usm)
ABSOLUTE MAXIMU... |
| Description |
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
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| File Size |
119.57K /
5 Page |
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it Online |
Download Datasheet |
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KEC[KEC(Korea Electronics)]
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| Part No. |
KTD1824
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| OCR Text |
...age VEBO. Low noise voltage NV. usm type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
KTD1824
EPITAXIAL PLANAR NPN TRANSISTOR
E M B M
2
D 3
DIM A
B... |
| Description |
EPITAXIAL PLANAR NPN TRANSISTOR (FOR LOW-FREQUENCY AMPLIFICATION)
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| File Size |
71.28K /
3 Page |
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it Online |
Download Datasheet |
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Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| Part No. |
KDR331
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| OCR Text |
usm.
2 M
KDR331
SCHOTTKY BARRIER TYPE DIODE
E B M
D 3
DIM A
B C D E G H
1
MILLIMETERS _ 2.00 + 0.20 _ 1.25 + 0.15 _ 0.90 + 0.10
0.3+0.10/-0.05 _ 2.10 + 0.20 0.65 0.15+0.1/-0.06 1.30 0.00-0.10 0.70 _ 0.42 + 0.10 0.10 MI... |
| Description |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(HIGH SPEED SWITCHING)
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| File Size |
64.59K /
2 Page |
View
it Online |
Download Datasheet |
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KEC[KEC(Korea Electronics)]
Korea Electronics (KEC)
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| Part No. |
KDR322
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| OCR Text |
... IR=5 A (Max.). Small Package : usm.
2
D 3
DIM A
B C D E G H J K
1
MILLIMETERS _ 2.00 + 0.20 _ 1.25 + 0.15 _ 0.90 + 0.10
0.3+0.10/-0.05 _ 2.10 + 0.20 0.65 0.15+0.1/-0.06 1.30 0.00-0.10 0.70 _ 0.42 + 0.10 0.10 MIN
J G
... |
| Description |
SILICON EPITAXIAL SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
Schottky Barrier Diode
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| File Size |
64.99K /
2 Page |
View
it Online |
Download Datasheet |
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Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
KEC Holdings
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| Part No. |
KDR105
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| OCR Text |
... NC 2. ANODE 3. CATHODE
2 1
usm
Marking
DL
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Reverse Voltage Forward Voltage Reverse Current Total Capacitance VR VF IR CT
)
TEST CONDITION IR=50 A IF=0.1A VR=25V VR=10V, f=1M... |
| Description |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(HIGH FREQUENCY RECTIFICATION)
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| File Size |
378.50K /
2 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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