Transistor
2SA1124
Silicon PNP epitaxial planer type
For low-frequency high breakdown voltage amplification Complementary to 2SC2632
5...1 150 -55 ~ +150 Unit V V
3.2 0.45-0.1 1.27 1.27
+0.2
13.50.5
Satisfactory foward current tr...
... pF
Gain bandwidth product f T Collector output capacitance Cob
VCE = -6 V, I C = -10 mA VCB = -10 V, IE = 0, f = 1 MHz
Notes: 1. The 2SA1188 and 2SA1189 are grouped by h FE as follows. 2. Pulse test D 250 to 500 E 400 to 800
Se...
... dB
Gain bandwidth product f T Collector output capacitance Noise figure Cob NF
VCE = -6 V, I C = -10 mA VCB = -10 V, IE = 0, f = 1 MHz VCE = -6 V, I C = -0.1 mA, Rg = 10 k f = 1 kHz VCE = -6 V, I C = -0.1 mA, Rg = 10 k f = 10 Hz VCB ...
...CBO I EBO hFE VCE(sat) VBE(sat) t on t off
2
2SA1193(K)
Maximum Collector Dissipation Curve 0.9 Collector power dissipation PC (W) Collector current IC (A) -3 -1.0 0.6 -0.3 -0.1 -0.03 -0.01 -0.003 -3 iC (peak) IC max Area of Safe Ope...
...CBO I EBO hFE VCE(sat) VBE(sat) t on t off
Maximum Collector Dissipation Curve 12 Collector power dissipation Pc (W) -10 -3 iC (peak) -1.0 -0.3 -0.1 -0.03
Area of Safe Operation
PW =1
Collector Current IC (A)
ms
8
IC (max...
Transistors
2SA2009
Silicon PNP epitaxial planer type
Unit: mm
(0.425)
For low-frequency high breakdown voltage amplification I Fea...1 -0.0 3
0.15+0.10 -0.05
1.250.10
2.10.1 5
1
2
0.20.1
(0.65) (0.65)
I Absolute...