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  rf-mosfet Datasheet PDF File

For rf-mosfet Found Datasheets File :: 1960    Search Time::1.141ms    
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    MRF136 MRF136-15

M/A-COM Technology Solu...
M/A-COM Technology Solutions, Inc.
Part No. MRF136 MRF136-15
OCR Text RF MOSFET Line 15W, to 400MHz, 28V Designed for wideband large signal amplifier and oscillator applications Up to 400 MHz range, in single-ended configuration N-Channel enhancement mode . * Guaranteed 28 volt, 150 MHz performance Output po...
Description    The RF MOSFET Line
The RF MOSFET Line 15W, to 400MHz, 28V

File Size 597.74K  /  12 Page

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    UF281OOH

Tyco Electronics
Part No. UF281OOH
OCR Text rf mosfet power transistor, ioow, 28v 100 - 500 mhz uf281 ooh features n-channel enhancement mode device dmos structure lower capacitances for broadband operation high saturated output power lower noise figure ...
Description RF MOSFET Power Transistor, 100W, 28V 100 - 500 MHz

File Size 185.43K  /  3 Page

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    MRF136Y MRF136Y-15

M/A-COM Technology Solu...
M/A-COM Technology Solutions, Inc.
Part No. MRF136Y MRF136Y-15
OCR Text RF MOSFET Line 30W, to 400MHz, 28V Designed for wideband large signal amplifier and oscillator applications Up to 400 MHz range, in either single-ended or push-pull configuration. N-Channel enhancement mode . * Guaranteed 28 volt, 150 MHz ...
Description    The RF MOSFET Line
The RF MOSFET Line 30W, to 400MHz, 28V

File Size 404.34K  /  10 Page

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    MRF134

M/A-COM Technology Solu...
M/A-COM Technology Solutions, Inc.
Part No. MRF134
OCR Text RF MOSFET Line: Broadband RF Power FET 5.0W, to 400MHz, 28V Designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range. N-Channel enhancement mode M/A-COM Products Released - Rev. 05202009 Product Imag...
Description    The RF MOSFET Line: Broadband RF Power FET
The RF MOSFET Line: Broadband RF Power FET 5.0W, to 400MHz, 28V

File Size 492.22K  /  12 Page

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    DU2860U

M/A-COM Technology Solu...
M/A-COM Technology Solutions, Inc.
Part No. DU2860U
OCR Text RF Power MOSFET Transistor 60W, 2-175MHz, 28V Features M/A-COM Products Released; RoHS Compliant Package Outline * * * * * N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated...
Description RF Power MOSFET Transistor 60W, 2-175MHz, 28V

File Size 140.31K  /  3 Page

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    DU2860T

M/A-COM Technology Solu...
M/A-COM Technology Solutions, Inc.
Part No. DU2860T
OCR Text RF Power MOSFET Transistor 60W, 2-175MHz, 28V Features M/A-COM Products Released; RoHS Compliant Package Outline * * * * * N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated...
Description RF Power MOSFET Transistor 60W, 2-175MHz, 28V

File Size 152.00K  /  3 Page

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    RA60H4452M1 RA60H4452M1-101 RA60H4452M108

Mitsubishi Electric Semiconductor
Part No. RA60H4452M1 RA60H4452M1-101 RA60H4452M108
OCR Text RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H4452M1 BLOCK DIAGRAM 2 3 RoHS Compliance, 440-520MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H4452M1 is a 60-watt RF MOSFET ...
Description RF MOSFET MODULE 440-520MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO

File Size 167.94K  /  9 Page

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    DE275-201N25A

IXYS Corporation
Part No. DE275-201N25A
OCR Text RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M...
Description RF Power MOSFET

File Size 138.34K  /  5 Page

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    AGR26045EF

TriQuint Semiconductor
Part No. AGR26045EF
OCR Text ...tal oxide semiconductor (LDMOS) RF power transistor suitable for ultrahigh-frequency (UHF) applications, including multichannel multipoint d...MOSFET Electrical Characteristics Recommended operating conditions apply unless otherwise specif...
Description 45 W, 2.535 GHz-2.655 GHz, N-Channel E-Mode, Lateral MOSFET

File Size 351.13K  /  9 Page

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    MRF140

MOTOROLA[Motorola, Inc]
Part No. MRF140
OCR Text RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode Designed primarily for linear large-signal output stages up to 150 MHz frequency range. * Specified 28 Volts, 30 MHz Characteristics Output Power = 150 Watts Po...
Description N-CHANNEL MOS LINEAR RF POWER FET

File Size 162.25K  /  6 Page

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