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  rf microwave Datasheet PDF File

For rf microwave Found Datasheets File :: 8447    Search Time::1.922ms    
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    HMC318MS8G

HITTITE[Hittite Microwave Corporation]
Part No. HMC318MS8G
OCR Text ...d) Control Voltage Range (Vctl) rf Input Power (rfin)(Vdd = +3.0 Vdc) Channel Temperature Continuous Pdiss (T = 85 C) (derate 9.76 mW/C abov...microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-337...
Description GaAs MMIC LOW NOISE AMPLIFIER with AGC 5.0 - 6.0 GHz
GaAs MMIC LOW NOISE AMPLIFIER with AGC, 5.0 - 6.0 GHz

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    MSA-9970

Avago Technologies, Ltd.
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
Part No. MSA-9970
OCR Text ... Configuration USER SELECTABLE rf Cf R bias VCC 10 V rfC (Optional) C block IN 1 2 Vd = 7.8 V 4 3 MSA C block OUT 6-489 5965-9668E MSA-9970 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] rf Input...
Description Cascadable Silicon Bipolar MMIC Amplifier 级联硅双极MMIC放大

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    NJM12904 NJM12904D NJM12904E NJM12904L NJM12904M NJM12904R NJM12904V PHA2731-190M

MA-Com
MACOM[Tyco Electronics]
Analog Devices, Inc.
Part No. NJM12904 NJM12904D NJM12904E NJM12904L NJM12904M NJM12904R NJM12904V PHA2731-190M
OCR Text ...0s Pulse, 10% Duty Amplifier in rf Test Fixture VCC PHA2731-190M rf IN rf OUT VCC Typical Performance Curves Performance at 190W POUT, VCC=38V, 200 s, 10% 10 9.5 Gain Eff. Performance vs. PIN, 38 VCC=38V, 200 s, 10% ...
Description Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz / 200s Pulse / 10 Duty
Radar Pulsed Power Amplifier-190 Watts 2.7-3.1GHz,200ms Pulse,10% Duty
Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz, 200s Pulse, 10 Duty
Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz, 200レs Pulse, 10 Duty 雷达脉冲功率Amplifier.190.7.3.1千兆赫,200レ拧脉冲10职务

File Size 52.66K  /  2 Page

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    UPC8139GR-7JH UPC8139GR-7JH-E1 UPC8158K UPC8101GR UPC8104GR UPC8105GR UPC8110GR UPC8125GR UPC8126GR UPC8126K UPC8129GR

NEC[NEC]
Part No. UPC8139GR-7JH UPC8139GR-7JH-E1 UPC8158K UPC8101GR UPC8104GR UPC8105GR UPC8110GR UPC8125GR UPC8126GR UPC8126K UPC8129GR
OCR Text ...wering power consumption of the rf block. This IC is packaged in a small, thin 30 pin plastic TSSOP (225 mil). FEATURES * Low voltage operation, low current consumption VCC = 2.7 to 4.0 V, ICC = 32.5 mA at transmitter, ICC = 4.8 mA at r...
Description Single Chip Transceiver Silicon MMIC for PHS

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    UPC8194K UPC8194K-E1

NEC Corp.
NEC[NEC]
Part No. UPC8194K UPC8194K-E1
OCR Text ...VE NORTH AMERICAN AGENT FOR NEC rf, microwave & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393 * FAX (408) 988-0279 Inte...
Description RX-IF SiMMIC FOR W-CDMA AGC I/Q DEMODULATOR

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    UPC8195K UPC8195K-E1

NEC Corp.
NEC[NEC]
Part No. UPC8195K UPC8195K-E1
OCR Text ...VE NORTH AMERICAN AGENT FOR NEC rf, microwave & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393 * FAX (408) 988-0279 Inte...
Description TX-IF SiMMIC FOR W-CDMA AGC I/Q MODULATOR

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    BAS40-T1 BAS40 Q62702A1176 BAS40-04Q62702-D980

Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Analog Devices, Inc.
Part No. BAS40-T1 BAS40 Q62702A1176 BAS40-04Q62702-D980
OCR Text ...ee our WWW-Pages: Discrete and rf-Semiconductors (Small Signal Semiconductors) www.siemens.de/semiconductor/products/35/35.htm HiRel Discrete and microwave Semiconductors www.siemens.de/semiconductor/products/35/353.htm Please contact als...
Description DIODE SCHOTTKY SOT-23
HiRel Silicon Schottky Diode (HiRel Discrete and microwave Semiconductor General-purpose diodes for high-speed switching Circuit protection) 伊雷尔硅肖特基二极管(伊雷尔和微波半导体分立一般用于高速开关电路保护的目的,二极管

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    INA-02100

http://
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
Part No. INA-02100
OCR Text ...ld wire.[1] Chip Outline[1] rf OUT GND 2 Description The INA-02100 is a low-noise silicon bipolar Monolithic microwave Integrated Circuit (MMIC) feedback amplifier chip. It is designed for narrow or wide bandwidth industrial and mil...
Description Low Noise/ Cascadable Silicon Bipolar MMIC Amplifier
Low Noise, Cascadable Silicon Bipolar MMIC Amplifier
Low Noise Cascadable Silicon Bipolar MMIC Amplifier

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    INA-02170

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. INA-02170
OCR Text ...e high gain and low noise IF or rf amplification. The INA series of MMICs is fabricated using HP's 10 GHz fT, 25 GHz fMAX, ISOSATTM-I silico...microwave Integrated Circuit (MMIC) Typical Biasing Configuration VCC > 8 GHz rfC (Optional) Rbi...
Description Low Noise Cascadable Silicon Bipolar MMIC Amplifier
Low Noise, Cascadable Silicon Bipolar MMIC Amplifier
Low Noise/ Cascadable Silicon Bipolar MMIC Amplifier

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    INA-02184 INA-02184-BLK INA-02184-TR1 INA-02186 INA-02186-BLK INA-02186-TR1

http://
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
Part No. INA-02184 INA-02184-BLK INA-02184-TR1 INA-02186 INA-02186-BLK INA-02186-TR1
OCR Text ...e high gain and low noise IF or rf amplification. The INA series of MMICs is fabricated using HP's 10 GHz fT, 25 GHz fMAX, ISOSATTM-I silico...microwave Integrated Typical Biasing Configuration VCC rfC (Optional) Rbias Cblock rf IN 1 2 4 3...
Description GT 10C 10#16 PIN PLUG 低噪声,可级联硅双极MMIC放大
GT 10C 10#16 SKT PLUG
Low Noise/ Cascadable Silicon Bipolar MMIC Amplifier
Low Noise, Cascadable Silicon Bipolar MMIC Amplifier
Low Noise Cascadable Silicon Bipolar MMIC Amplifier

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