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  rad.20 Datasheet PDF File

For rad.20 Found Datasheets File :: 3507    Search Time::3.344ms    
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    IRHF7130

International Rectifier
Part No. IRHF7130
OCR Text ...-channel ref: mil-prf-19500/601 rad hard ? hexfet ? technology to-39 features: single event effect (see) hardened low r ds(on) low...20 t d (on) turn-on delay time ? ? 25 v dd = 50v, i d =8.0a t r rise time ? ? 32 v gs =12v, r g ...
Description (IRHFx130) RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)

File Size 444.82K  /  12 Page

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    AN1207 AN1207D

Freescale Semiconductor, Inc
Part No. AN1207 AN1207D
OCR Text ...y of 5 V, this is 5/4 = 0.398 V/rad. The system's step response is shown in Figure 4. To achieve about 15% overshoot, a damping factor of 0....20 in decimal). The N Register determines the frequency tuned. Tuning RC = n 2 damping factor (2) 9...
Description THE MC145170 in Basic HF and VHF Oscillators

File Size 256.66K  /  6 Page

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    Peregrine Semiconductor
Part No. PE99155
OCR Text ... 100 khz - 1 mhz (100 krad post rad, tc = 25c) -1.5 0 1.5 % reference voltage line regulation, kvi (steady state) +4.6v v in ...20 a sync vih 2.2 v sync vil 1.25 v v out = v_sdb = 0v -1.6 -0.05 ma...
Description Radiation Hardened UltraCMOS Monolithic Point-of-Load Synchronous Buck Regulator with Integrated Switches

File Size 463.84K  /  15 Page

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    Aeroflex Circuit Techno...
Part No. UT54ACTQ16374UCA
OCR Text ...d tm cmos - total dose: 100k rad(si) - single event latchup immune - seu onset let >95 mev -cm 2 /mg ? high speed, low power consum...20) o13 (19) o12 (17) o11 (23) o15 (22) o14 (14) oe 2 (25) cp2 oe 1 2 3d 4 1d 2 pinouts 1 2 3 4 5 ...
Description RadHard CMOS 16-bit D Flip-Flop TTL Inputs, and Three-State Outputs

File Size 142.28K  /  14 Page

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    FRX130D FRX130D1 FRX130D3 FRX130H FRX130H4 FRX130R FRX130R1 FRX130R3 FRX130R4 FN3144

Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. FRX130D FRX130D1 FRX130D3 FRX130H FRX130H4 FRX130R FRX130R1 FRX130R3 FRX130R4 FN3144
OCR Text ...ose hardness is offered at 100K RAD (Si) and 1000K RAD (Si) with neutron hardness ranging from 1E13n/cm2 for 500V product to 1E14n/cm2 for 1...20 11.4 4.5 0.09 18 6 18 -55 to 150 300 UNITS V V A A A V W W W/oC A A A oC oC Drain to Source Vo...
Description Radiation Hardened N-Channel Power MOSFETs 6 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system

File Size 34.94K  /  5 Page

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    FSTYC9055D FSTYC9055D1 FSTYC9055D3 FSTYC9055R FSTYC9055R1 FSTYC9055R3 FSTYC9055R4 FN4755

INTERSIL[Intersil Corporation]
Part No. FSTYC9055D FSTYC9055D1 FSTYC9055D3 FSTYC9055R FSTYC9055R1 FSTYC9055R3 FSTYC9055R4 FN4755
OCR Text ... 0.023 * Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) * Typical SEE Immunity - LET of 36MeV/mg/cm2 with VDS up to 80% of Rated...20 162 65 1.30 192 64 192 -55 to 150 300 UNITS V V A A A V W W W/ oC A A A oC oC CAUTION: Stresse...
Description Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
From old datasheet system

File Size 73.87K  /  8 Page

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    FSYC9055D FSYC9055D1 FSYC9055D3 FSYC9055R FSYC9055R1 FSYC9055R3 FSYC9055R4

INTERSIL[Intersil Corporation]
Part No. FSYC9055D FSYC9055D1 FSYC9055D3 FSYC9055R FSYC9055R1 FSYC9055R3 FSYC9055R4
OCR Text .../Cretor () /DOCI - Meets Pre-RAD Specifications to 100K RAD (Si) * Single Event - Safe Operating Area Curve for Single Event Effects - SE...20 162 65 1.30 177 59 177 -55 to 150 300 UNITS V V A A A V W W W/ oC A A A oC oC Drain to Source ...
Description Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs

File Size 51.24K  /  8 Page

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    Intersil
Part No. ACTS244K
OCR Text .... . . . . . . . . . . . . >300k rad (si) ? single event upset (seu) immunity: <1 x 10 -10 errors/bit/day (typ) ? seu let threshold . . . . ...20 lead ceramic flatpack (k suf?x) or a dual-in-line ceramic package (d suf?x). january 1996 orderin...
Description Radiation Hardened Octal Non-Inverting Three-State Buffer

File Size 47.17K  /  3 Page

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    IRHM2C50SE

International Rectifier
Part No. IRHM2C50SE
OCR Text ...annel single event effect (see) rad hard pd - 91252a pre-irradiation 600volt, 0.6 w w w w w , (see) rad hard hexfet international rectifiers...20 137 h circuit inductance required to limit di/dt table 3. single event effects let (si) fluenc...
Description 600V 50kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-254AA package

File Size 97.95K  /  8 Page

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    28C011TRT2F 28C011TRT2FB 28C011TRT2FE 28C011TRT2FI 28C011TRT2FS 28C011TRPFB12 28C011TRPFB15 28C011TRPFB20 28C011TRPFS20

Maxwell Technologies
ETC
Part No. 28C011TRT2F 28C011TRT2FB 28C011TRT2FE 28C011TRT2FI 28C011TRT2FS 28C011TRPFB12 28C011TRPFB15 28C011TRPFB20 28C011TRPFS20 28C011TRT1FS20 28C011TRT2FS20 28C011TRT4FS20 28C011TRPFS12 28C011TRPFS15 28C011TRT1FS12 28C011TRT2FS12 28C011TRT1FS15 28C011TRT2FS15 28C011TRT4FS12 28C011TRT4FS15 28C011TRPFE12 28C011TRPFE20 28C011TRT1FE20 28C011TRT2FE20 28C011TRT4FE20 28C011TRT1FB12 28C011TRT1FB15 28C011TRT1FB20 28C011TRT1FE15 28C011TRT1FE12 28C011TRPFI12 28C011TRT1FI12 28C011TRT4FI12 28C011TRT2FI12 28C011TRT2FB12 28C011TRT2FB15 28C011TRT2FB20 28C011TRPFE15 28C011TRT1FI20
OCR Text ...TURES: * 128k x 8-bit EEPROM * RAD-PAK(R) radiation hardened against natural space radiation * Total dose hardness: - > 100 krad (Si), depe...20 mW/MHz active (typical) - 110 W standby (maximum) * Screening per TM 5004 * QCI per TM5005 DES...
Description 1 megabit (128K x 8-bit) - EEPROM
1 Megabit (128K x 8-Bit) EEPROM

File Size 239.71K  /  16 Page

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