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npt-trench Datasheet PDF File

For npt-trench Found Datasheets File :: 114 Search Time::3.438ms
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				Infineon Technologies A... Infineon Technologies AG
Part No.	IKW40T120 Q67040-S4520
OCR Text	...ss, temperature stable behavior NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge Very soft, fast recovery anti-parallel EmCon HE diode Complete product spec...
Description	LOW LOSS DUOPACK : IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY WITH SOFT, FAST RECOVERY ANTI-PARAALEL EMCON HE DIODE IGBTs & DuoPacks - 40A 1200V TO247 IGBT Diode
File Size	447.79K / 15 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IHW20N120R2
OCR Text	..., temperature stable behavior * NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) * Low EMI 1 * Qualified according to JEDEC for target applications * Pb-free lead plating; RoHS com...
Description	Reverse Conducting IGBT with monolithic body diode
File Size	372.50K / 12 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IHW20N120R
OCR Text	..., temperature stable behavior * NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) * Low EMI 1 * Qualified according to JEDEC for target applications * Pb-free lead plating; RoHS com...
Description	Reverse Conducting IGBT with monolithic body diode
File Size	354.90K / 12 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APT25GN120B2DQ2 APT25GN120B2DQ2G
OCR Text	...g the latest Non-Punch Through (NPT) Field Stop technology, these IGBT's have a very short, low amplitude tail current and low Eoff. The Trench Gate design results in superior VCE(on) performance. Easy paralleling results from very tight pa...
Description	IGBT
File Size	218.17K / 9 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IHW15N120R
OCR Text	..., temperature stable behavior * NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) * Low EMI 1 * Qualified according to JEDEC for target applications * Pb-free lead plating; RoHS com...
Description	Reverse Conducting IGBT with monolithic body diode
File Size	367.22K / 12 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IHW30N120R2
OCR Text	..., temperature stable behavior * NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) * Low EMI 1 * Qualified according to JEDEC for target applications * Pb-free lead plating; RoHS com...
Description	Reverse Conducting IGBT with monolithic body diode
File Size	383.17K / 12 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IHW30N120R
OCR Text	..., temperature stable behavior * NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) * Low EMI 1 * Qualified according to JEDEC for target applications * Pb-free lead plating; RoHS com...
Description	IGBT with monolithic body diode for soft switching Applications
File Size	1,001.42K / 12 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	MIG10J503
OCR Text	...neration trench gate thin wafer NPT IGBT is adopted. FRD is built in. The level shift circuit by high-voltage IC is built in. The simplification of a high side driver power supply is possible by the bootstrap system. Short Circuit Protectio...
Description	AC MOTOR CONTROLLER, 20 A, DMA30 From old datasheet system TOSHIBA INTELLIGENT POWER MODULE
File Size	110.38K / 9 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APT35GN120B APT35GN120BG
OCR Text	...g the latest Non-Punch Through (NPT) Field Stop technology, these IGBT's have a very short, low amplitude tail current and low Eoff. The Trench Gate design results in superior VCE(on) performance. Easy paralleling results from very tight pa...
Description	IGBT
File Size	180.57K / 6 Page	View it Online	Download Datasheet

				Microsemi, Corp. Advanced Power Technology
Part No.	APT35GN120L2DQ2 APT35GN120L2DQ2G
OCR Text	...g the latest Non-Punch Through (NPT) Field Stop technology, these IGBT's have a very short, low amplitude tail current and low Eoff. The Trench Gate design results in superior VCE(on) performance. Easy paralleling results from very tight pa...
Description	Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: 264 MAX [L2]; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 46; 94 A, 1200 V, N-CHANNEL IGBT
File Size	216.77K / 9 Page	View it Online	Download Datasheet

For npt-trench Found Datasheets File :: 114 Search Time::3.438ms
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