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Shenzhen Winsemi Microelectronics Co., Ltd
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| Part No. |
WFD4N60B
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| OCR Text |
...ced using winsemi s advanced p lanar stripe, dmos technology. this latest technology has b een e specially designed to minimize on-state resistance, have a high rugged avalanche characteristics. this devices is specially well suited for ha... |
| Description |
Silicon N-Channel MOSFET
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| File Size |
506.53K /
7 Page |
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it Online |
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Shenzhen Winsemi Microelectronics Co., Ltd
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| Part No. |
WFU4N60
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| OCR Text |
...ced using winsemi s advanced p lanar stripe, dmos technology. this latest technology has b een especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. this devices is specially well suited for hal... |
| Description |
Silicon N-Channel MOSFET
|
| File Size |
486.47K /
7 Page |
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it Online |
Download Datasheet |
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SENSITRON SEMICONDUCTOR
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| Part No. |
ZM4730-G
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| OCR Text |
...igh power rating. silicon p lanar power zener diodes . standard zener voltage tolerance is 10 % .add suffix ?a ? for 5 % tolerance. other zener voltages and tolerances are available upon request. these diodes are also avai... |
| Description |
3.9 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
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| File Size |
140.93K /
4 Page |
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it Online |
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American Microsemiconductor Inc.
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| Part No. |
MRF342
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| OCR Text |
lanar ty
e rf
ower transistor ? 2
14 american microsemiconductor, inc. specifications are subject to change without notice. aerospace mgmt. sys. cert . as/en/jisq9100:2009 rev. c iso9001:2008 cert no. 45325 133 kings road,... |
| Description |
MRF342
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| File Size |
4,340.17K /
2 Page |
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it Online |
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American Microsemiconductor Inc.
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| Part No. |
1N4830
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| OCR Text |
...nt low voltage regulation ? p lanar passivated die elements value unit military / high rel n @ i r test cond. - -- ma v fm max. f orward voltage 2 .7 v @ i fm test cond. 100 ma @ i rm max.... |
| Description |
1N4830
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| File Size |
182.53K /
1 Page |
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it Online |
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