...S TA N D A R D PA R T O R D E R i N G i N F O R M AT i O N
Package Pins 6 Style SOT23-6 Ordering Part Number Tubes CMV7106Y/T Tape & Reel C...os T C V os iB i os RiN CMRR VCM PSRR Parameter i n p u t Of f s e t Vo l t a g e i n p u t Of f s e...
Description
CMV7106 LOW POWER, LOW VOLTAGE OP AMP WiTH RRiO AND SHUTDOWN, SOT23-6 CMV7106低功耗,低电压运算放大器和RRiO和关机,采用SOT23 - 6 Operational Amplifier Low voltage OPAMP with RPiO
...C SiGNATURE FOR iDENTiFiCATiON
i 8
OLMC
OE
Functional Block Diagram
i/CLK i i 8 i 8 i/DPP
OLMC iMUX
CLK
OLMC
i/O/Q
2
i/...os are possible in this mode. Dedicated input or output functions can be implemented as subsets of t...
Description
Zero Power E2CMos PLD EE PLD, 15 ns, PDiP24 Zero Power E2CMos PLD EE PLD, 15 ns, PQCC28
...C SiGNATURE FOR iDENTiFiCATiON
i 8 i/O/Q
OE
Functional Block Diagram
i/CLK i i iMUX
CLK
8 OLMC i 8 i OLMC
i/O/Q
i/O/Q
2
...os are possible in this mode. Dedicated input or output functions can be implemented as subsets of t...
Description
SiMPLE-EEPLD,PAL-TYPE,CMos,DiP,24PiN,PLASTiC High Performance E2CMos PLD Generic Array Logic
i
s s s s s s s s
V DSS 100 V 100 V
R DS(on) < 0.16 < 0.16
iD 16 A 11 A
TYPiCAL RDS(on) = 0.12 AVALANCHE RUGGED TECHNOLOGY 1...os s C rss Parameter Forward Transconductance input Capacitance Output Capacitance Reverse Transfer ...
Description
From old datasheet system N - CHANNEL ENHANCEMENT MODE POWER Mos TRANSiSTOR
...its V V/C Conditions VGS = 0V, i D = 250A VGS = 0V, iD = -250A Reference to 25C, iD = 1mA Reference to 25C, iD = -1mA VGS = 10V, iD = 2.2A ...os s
200
12
150
8
100
C rss
4
50
0 1 10 100
0 0 2 4 6 8 10
V D S , ...
...BR)DSS RDS(on) VGS(th) gfs iDSS i GSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-to-Source On-Resistance Gate Threshold Vol...os s
= = = =
0V , f = 1MH z C gs + C g d , Cds S H OR TED Cgd C ds + C gd
20
iD = -2.3A ...
.../TJ
RDS(on) VGS(th) gfs iDSS i GSS Qg Q gs Q gd t d(on) tr t d(off) tf LD LS Ciss Coss Crss
Parameter Drain-to-Source Breakdown Voltag...os s
= = = =
0V , f = 1MH z C gs + C g d , Cds SH OR TED Cgd C ds + C gd
i D = -7.2 A V DS ...
Description
-55V Single P-Channel HEXFET Power MosFET in a TO-220AB package Power MosFET(Vdss=-55V, Rds(on)=0.175ohm, id=-12A)
.../TJ
RDS(on) VGS(th) gfs iDSS i GSS Qg Qgs Qgd td(on) tr t d(off) tf LS Ciss Coss Crss
Parameter Drain-to-Source Breakdown Voltage Brea...os s
= = = =
0V , f = 1MH z C gs + C g d , Cds SH OR TED Cgd C ds + C gd
20
i D = -10 A ...
Description
Power MosFET(Vdss=-55V/ Rds(on)=0.10ohm/ id=-19A) Power MosFET(Vdss=-55V, Rds(on)=0.10ohm, id=-19A) -55V Single P-Channel HEXFET Power MosFET in a D2-Pak package -55V Single P-Channel HEXFET Power MosFET in a TO-262 package
...l notes) 1. Changed device name i. KM29U256T -> K9F5608U0M-YCB0 ii. KM29U256iT -> K9F5608U0M-YiB0 1. Changed tWP AC Timing - if tCS is set l...os. This scheme dramatically reduces pin counts and allows systems upgrades to future densities by m...
Description
From old datasheet system EEPROM,NAND FLASH,33MX8,CMos,TSSOP,48PiN,PLASTiC 32M x 8 Bit NAND Flash Memory