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  hetero Datasheet PDF File

For hetero Found Datasheets File :: 348    Search Time::1.219ms    
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    VSMB3940X01-GS08 VSMB3940X01-GS18

Vishay Siliconix
Part No. VSMB3940X01-GS08 VSMB3940X01-GS18
OCR Text ...g diode , 940 nm, gaalas double hetero vsmb3940x01 vishay semiconductors description vsmb3940x01 is an infrared, 940 nm emitting diode in gaalas double hetero (dh) technology with high radiant power and high speed, molded in a plcc-2 pack...
Description High Speed Infrared Emitting Diode, 940 nm, GaAlAs Double hetero

File Size 136.83K  /  6 Page

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    TSHF6410

Vishay Siliconix
Part No. TSHF6410
OCR Text hetero FEATURES * Package type: leaded * Package form: T-13/4 * Dimensions (in mm): 5 * Peak wavelength: p = 890 nm * High reliability * High radiant power * High radiant intensity 94 8389 * Angle of half intensity: = 22 * Low forw...
Description High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double hetero

File Size 105.71K  /  5 Page

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    TSHG5510

Vishay Siliconix
Part No. TSHG5510
OCR Text ...ng diode, 830 nm, gaalas double hetero tshg5510 vishay semiconductors description tshg5510 is an infrared, 830 nm emitting diode in gaalas double hetero (dh) technology with high radiant power and high speed, molded in a clear, untinted p...
Description High Speed Infrared Emitting Diode

File Size 158.76K  /  5 Page

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    TSFF6410

Vishay Siliconix
Part No. TSFF6410
OCR Text ...ng diode, 870 nm, gaalas double hetero tsff6410 vishay semiconductors description tsff6410 is an infrared, 870 nm emitting diode in gaalas double hetero (dh) technology with high radiant power and high speed, molded in a clear, untinted p...
Description High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double hetero

File Size 107.07K  /  5 Page

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    NE32500 NE27200

NEC[NEC]
Part No. NE32500 NE27200
OCR Text hetero JUNCTION FIELD EFFECT TRANSISTOR NE32500, NE27200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32500 and NE27200 are hetero Junction FET chip that utilizes the hetero junction between Si-doped Al...
Description C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP

File Size 38.15K  /  8 Page

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    TSFF6210-09

Vishay Siliconix
Part No. TSFF6210-09
OCR Text ...ng diode, 870 nm, gaalas double hetero tsff6210 vishay semiconductors description tsff6210 is an infrared, 870 nm emitting diode in gaalas double hetero (dh) technology with high radiant power and high speed, molded in a clear, untinted p...
Description High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double hetero

File Size 106.94K  /  5 Page

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    NE33284A NE33284A-SL NE33284A-T1 NE33284A-T1A NE33284

NEC, Corp.
NEC Corp.
NEC[NEC]
Part No. NE33284A NE33284A-SL NE33284A-T1 NE33284A-T1A NE33284
OCR Text hetero JUNCTION FIELD EFFECT TRANSISTOR NE33284A L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE33284A is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excel...
Description L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET L至X波段超低噪声放大器N沟道黄建忠场效应
KJ 6C 6#12 PIN PLUG L至X波段超低噪声放大器N沟道黄建忠场效应

File Size 61.34K  /  10 Page

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    NE325S01 NE325S01-T1 NE325S01-T1B

NEC Corp.
NEC[NEC]
Part No. NE325S01 NE325S01-T1 NE325S01-T1B
OCR Text hetero JUNCTION FIELD EFFECT TRANSISTOR NE325S01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE325S01 is a hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its exce...
Description C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

File Size 59.00K  /  12 Page

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    TSHF5410 TSHF541008

Vishay Siliconix
Part No. TSHF5410 TSHF541008
OCR Text hetero FEATURES * Package type: leaded * Package form: T-13/4 * Dimensions (in mm): 5 * Leads with stand-off * Peak wavelength: p = 890 nm * High reliability * High radiant power 94 8390 * High radiant intensity * Angle of half inten...
Description High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double hetero

File Size 106.14K  /  5 Page

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    TSHF5210 TSHF521008

http://
Vishay Siliconix
Part No. TSHF5210 TSHF521008
OCR Text hetero FEATURES * Package type: leaded * Package form: T-13/4 * Dimensions (in mm): 5 * Leads with stand-off * Peak wavelength: p = 890 nm * High reliability * High radiant power 94 8390 * High radiant intensity * Angle of half inten...
Description High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double hetero

File Size 106.39K  /  5 Page

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