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  e-amps adc. Datasheet PDF File

For e-amps adc. Found Datasheets File :: 3095    Search Time::2.344ms    
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    MGW20N60D

MOTOROLA INC
MOTOROLA[Motorola, Inc]
Part No. MGW20N60D
OCR Text ... VOLTS SHORT CIRCUIT RATED G E G C E CASE 340F-03, Style 4 TO-247AE MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating...AMPS) IC, COLLECTOR CURRENT (AMPS) VGE = 20 V 17.5 V 12.5 V 15 V 40 10 V 60 TJ = 125C VGE = 20 V ...
Description Insulated Gate Bipolar Transistor with Anti-Parallel Diode

File Size 245.88K  /  6 Page

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    ONSEMI[ON Semiconductor]
Part No. MJW2119305 MJW21194G MJW21193 MJW21194 MJW21193G
OCR Text ...erved for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 13 is based on TJ(pk) = 150C; TC is variable depending on conditions. At high case temperatures, th...
Description 16 A COMPLEMENTARY SILICON POWER TRANSISTORS 250 V, 200 W

File Size 70.39K  /  8 Page

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    MGW20N120-D

ON Semiconductor
Part No. MGW20N120-D
OCR Text ...ated mounting hole ? high speed e off : 160 j/a typical at 125 c ? high short circuit capability 10 s minimum ? robust high voltage ...amps) 12.5 v 17.5 v 15 v 10 v 30 20 0 8 4 02 6 40 10 50 60 v ge = 20 v t j = 125 c v ce , collect...
Description Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate

File Size 125.44K  /  6 Page

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    Motorola
Part No. TP33N10E
OCR Text ...on gate this a dvance d t mo s e fet i s d esigne d t o w ithstan d h igh energy in the avalanche and commutation modes. the new energy e...amps) i d , drain current (amps) v gs , gatetosource voltage (volts) figure 2. transfer characteris...
Description Search --To MTP33N10E

File Size 194.49K  /  8 Page

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    MJW2119510

ON Semiconductor
Part No. MJW2119510
OCR Text ... capacitance (v cb = 10 vdc, i e = 0, f test = 1 mhz) c ob ? ? 500 pf mjw21195 (pnp) mjw21196 (npn) http://onsemi.com 3 typical characteristics i c , collector current (amps) figure 1. typical current gain bandwidth product figure 2...
Description Silicon Power Transistors

File Size 150.27K  /  7 Page

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    MMDFS6N303-D

ON Semiconductor
Part No. MMDFS6N303-D
OCR Text ...avings ? logic level gate drive e can be driven by logic ics ? mounting information for so8 package provided ? applications information prov...amps peak repetitive forward current (note 2.) (rated v r , square wave, 20 khz) t a = 108 c i fr...
Description Power MOSFET 6 Amps, 30 Volts N-Channel SO-8, FETKY

File Size 158.70K  /  12 Page

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    MGP7N60ED MGP7N60ED_D ON1877 ON1876

ONSEMI[ON Semiconductor]
Part No. MGP7N60ED MGP7N60ED_D ON1877 ON1876
OCR Text ...ssembly time and cost. This new E-series introduces an energy efficient, ESD protected, and short circuit rugged device. * * * * * Industry ...AMPS) TJ = 25C 15 12.5 V 10 20 LE -- 7.5 -- nH 17.5 V IC , COLLECTOR CURRENT (AMPS) 15 V ...
Description Insulated Gate Bipolar Transistor withr Anti-Parallel Diode
IGBT & DIODE IN TO-220 7.0 A @ 90 10 A @ 25 600 VOLTS
From old datasheet system

File Size 140.16K  /  6 Page

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    MGP7N60E

MOTOROLA[Motorola, Inc]
Part No. MGP7N60E
OCR Text ...n at high frequencies. This new E-series introduces an energy efficient, ESD protected, and short circuit rugged device. * * * * * * Industr...AMPS) TJ = 25C 15 12.5 V 10 17.5 V IC , COLLECTOR CURRENT (AMPS) 15 V 20 20 V TJ = 125C 15 12.5 V 10...
Description Insulated Gate Bipolar Transistor

File Size 118.28K  /  6 Page

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    NTB45N06LT4

ON Semiconductor
Part No. NTB45N06LT4
OCR Text ... v ds = 60 vdc, r g = 25 w ) e as 240 mj 1. when surface mounted to an fr4 board using 1 pad size, (cu area 1.127 in 2 ). 2. when surfa...amps) 0 v gs , gatetosource voltage (volts) figure 1. onregion characteristics figure 2. transfer ch...
Description TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 45A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 60V的五(巴西)直| 45A条(丁)|63AB

File Size 67.03K  /  8 Page

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