...rol s Power Supplies
*Higher dv/dt selections available
VOLTAGE RATINGS
Type Number Repetitive Peak Voltages VDRM VRRM V 2800 2700 2600 2500 2400 Conditions
DCR806SG28 DCR806SG27 DCR806SG26 DCR806SG25 DCR806SG24
Tvj = 0 to 125C...
...g s Battery Chargers
*Higher dv/dt selections available
VOLTAGE RATINGS
Type Number Repetitive Peak Voltages VDRM VRRM V 4800 4700 4600 4500 4400 Conditions
DCR818SG48 DCR818SG47 DCR818SG46 DCR818SG45 DCR818SG44
Tvj = 0 to 125C...
... dB ISO VSWR NF P1 dB IP3 tD Vd dv/dt
Parameters and Test Conditions: Id = 35 mA, ZO = 50
Power Gain (|S21| 2) Gain Flatness 3 dB Bandwidth[2] Reverse Isolation (|S12| 2) Input VSWR Output VSWR 50 Noise Figure Output Power at 1 dB Gai...
...t to negative transient voltage dv/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout for both channels n Separate logic supply range from 5 to 20V Logic and power ground 5V offset n CMOS Schmitt-triggered inputs with...
...t to negative transient voltage dv/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout for both channels n Separate logic supply range from 5 to 20V Logic and power ground 5V offset n CMOS Schmitt-triggered inputs with...
...t to negative transient voltage dv/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout for both channels n Separate logic supply range from 5 to 20V Logic and power ground 5V offset n CMOS Schmitt-triggered inputs with...
...t to negative transient voltage dv/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout for both channels 3.3V logic compatible Separate logic supply range from 3.3V to 20V Logic and power ground 5V offset CMOS Schmitt-trig...
...0C IDM PD @TC = 25C VGS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanc...
Description
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 60V Single N-Channel HEXFET Power MOSFET in a TO-262 package Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=84A) Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A) Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?) Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?
dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated
D
VDSS = 60V RDS(on) = 12m
G S
ID = 84A
Description
Advanced HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techn...
dv/dt Rating l 175C Operating Temperature l Fast Switching l Fully Avalanche Rated Description
l l
HEXFET(R) Power MOSFET
D
IRF1010NS IRF1010NL
VDSS = 55V RDS(on) = 11m
G S
Advanced HEXFET (R) Power MOSFETs from International...
Description
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss = 55 V/ Rds(on)=11mohm/ Id=85A) Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A) Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?) Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?