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Alpha & Omega Semiconductor
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| Part No. |
AOTF27S60
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| OCR Text |
... t l symbol r ja r cs r jc * drain current limited by maximum junction tempera ture. -55 to 150 300 aotf27s60l 65 -- 3.1 2.5 aotf27s60l 600 30 27* 17* 110 aotf27s60 single pulsed avalanche energy g w p d repetitive avalanche energy c 5... |
| Description |
Single HV MOSFETs (500V - 1000V)
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| File Size |
475.03K /
7 Page |
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Wolfspeed
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| Part No. |
PXAC243502FV-V1
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| OCR Text |
...n g ps 14.0 15.0 ? db drain ef?ciency h d 42 45 ? % adjacent channel power ratio acpr ? ?32 ?26 dbc pxac243502fv package h-37275-4 5 15 25 35 45 55 10 12 14 16 18 20 2150 2250 2350 2450 2550 drain efficiency (%... |
| Description |
High Power RF LDMOS FET 350W, 28V, 2300 - 2400 MHz
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| File Size |
337.52K /
10 Page |
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it Online |
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Nexperia
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| Part No. |
PMZ320UPE
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| OCR Text |
...onditions min typ max unit v ds drain-source voltage - - -30 v v gs gate-source voltage t j = 25 c -8 - 8 v i d drain current v gs = -4.5 v; t amb = 25 c [1] - - -1 a static characteristics r dson drain-source on-state resistance v gs =... |
| Description |
30 V, P-channel Trench MOSFET
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| File Size |
307.64K /
15 Page |
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it Online |
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Nexperia
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| Part No. |
PMZ130UNE
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| OCR Text |
...onditions min typ max unit v ds drain-source voltage - - 20 v v gs gate-source voltage t j = 25 c -8 - 8 v i d drain current v gs = 4.5 v; t amb = 25 c [1] - - 1.8 a static characteristics r dson drain-source on-state resistance v gs = ... |
| Description |
20 V, N-channel Trench MOSFET
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| File Size |
314.36K /
14 Page |
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it Online |
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HAOHAI
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| Part No. |
H1N60U H1N60D
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| OCR Text |
...e-source voltage 14 mj * ??? (*drain current limited by maximum junction temperature) v unit ?? value parameter symbol 30 v gs drain current pulsed ?? power dissipation (t l =25c) p d 28 w ?? storage temperature ? single pulse ava... |
| Description |
N-Channel MOSFET
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| File Size |
376.89K /
6 Page |
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it Online |
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Alpha & Omega Semiconductor
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| Part No. |
AON6234
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| OCR Text |
...d 100% r g tested symbol v ds drain-source voltage 40 the aon6234 uses trench mosfet technology that is uniquely optimized to provide the most efficient hi gh frequency switching performance.power losses are minimized due to an extreme... |
| Description |
Single MV MOSFETs (40V - 400V)
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| File Size |
344.13K /
6 Page |
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it Online |
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Alpha & Omega Semiconductor
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| Part No. |
AON6144
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| OCR Text |
...8 78 gate-source voltage pulsed drain current c 89 parameter drain-source voltage continuous drain current g maximum junction-to-case c/w c/w maximum junction-to-ambient a d 1.3 50 1.6 va absolute maximum ratings t a =25c unless otherwi... |
| Description |
Single MV MOSFETs (40V - 400V)
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| File Size |
319.72K /
6 Page |
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it Online |
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TOSHIBA
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| Part No. |
TK3A65DA
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| OCR Text |
...ulator applications ? low drain-source on-resistance: r ds (on) = 2.3 (typ.) ? high forward transfer admittance: |y fs | = 2.2 s (typ.) ? low leakage current: i dss = 10 a (max) (v ds = 650 v) ? enhancement mode: v th = 2... |
| Description |
Power MOSFET (N-ch 500V<VDSS≤700V)
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| File Size |
201.17K /
6 Page |
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it Online |
Download Datasheet |
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