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  BT139X-600H Datasheet PDF File

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    Mitsubishi Electric, Corp.
Part No. CM600HN-5F
Description HIGH POWER SWITCHING USE 大功率开关使

File Size 115.53K  /  2 Page

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Analog Devices

Part No. LTM4600HVMPV#PBF
Description 10A, 28VIN Hi Eff DC/DC µModul
Tech specs    

Official Product Page

HUA FENG CIRCUIT





    Mitsubishi Electric Corporation
Part No. QM600HD-M
Description MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE

File Size 64.25K  /  4 Page

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Analog Devices

Part No. LTM4600HVIV#PBF
Description 10A, 28VIN Hi Eff DC/DC µModul
Tech specs    

Official Product Page

    Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. QM600HD-M
Description HIGH POWER SWITCHING USE NON-INSULATED TYPE

File Size 58.83K  /  4 Page

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Analog Devices

Part No. AD5600HRMZ
Description SI,High Temp,V-Out,unbuffered
Tech specs    

Official Product Page

    CM600HN-5F

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. CM600HN-5F
Description Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
HIGH POWER SWITCHING USE INSULATED TYPE

File Size 65.59K  /  4 Page

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Analog Devices

Part No. LTM4600HVEV#PBF
Description 10A, 28VIN Hi Eff DC/DC µModul
Tech specs    

Official Product Page

    MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. CM600HA-5F
Description HIGH POWER SWITCHING USE INSULATED TYPE
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V

File Size 45.01K  /  4 Page

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Renesas Electronics Corporation

Part No. DA14706-00HZDEVKT-P
Description SmartBond™ DA1470x Bluetooth® Low Energy Development Kit Pro
Tech specs    

Official Product Page

    POWEREX[Powerex Power Semiconductors]
Part No. CM600HA-5F
Description Trench Gate Design Single IGBTMOD600 Amperes/250 Volts
Trench Gate Design Single IGBTMOD 600 Amperes/250 Volts
Trench Gate Design Single IGBTMOD⑩ 600 Amperes/250 Volts

File Size 51.12K  /  4 Page

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Renesas Electronics Corporation

Part No. DA14706-00HZDB-P
Description SmartBond™ DA14706 Bluetooth® Low Energy Daughter Board
Tech specs    

Official Product Page

    MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Powerex, Inc.
Part No. CM600HA-28H
Description High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
HIGH POWER SWITCHING USE INSULATED TYPE 大功率开关使用绝缘型

File Size 48.90K  /  4 Page

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    POWEREX[Powerex Power Semiconductors]
Part No. CM600HB-90H
Description Single IGBTMOD?/a> HVIGBT 600 Amperes/4500 Volts
Single IGBTMOD⑩ HVIGBT 600 Amperes/4500 Volts
Single IGBTMOD HVIGBT 600 Amperes/4500 Volts
Single IGBTMODHVIGBT 600 Amperes/4500 Volts

File Size 64.22K  /  4 Page

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    POWEREX[Powerex Power Semiconductors]
Part No. CM600HA-28H
Description Single IGBTMOD 600 Amperes/1400 Volts

File Size 54.24K  /  4 Page

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    CM600HA-24H

Mitsubishi Electric, Corp.
Mitsubishi Electric Semiconductor
Part No. CM600HA-24H
Description HIGH POWER SWITCHING USE INSULATED TYPE 大功率开关使用绝缘型

File Size 44.42K  /  4 Page

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Part: BT139X-600
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