| |
|
 |
FILTRONIC[Filtronic Compound Semiconductors]
|
| Part No. |
FPD4000V
|
| OCR Text |
...D4000V
4W POWER PHEMT
DRAIN bond PAD (4X)
GATE bond PAD (4X)
*
DESCRIPTION AND APPLICATIONS
DIE SIZE (m): 650 x 1300 DIE THICKNESS: 100 m bondING PADS (m): >70 x 65
The FPD4000V is a discrete depletion mode AlGaAs/InGaAs ... |
| Description |
4W POWER PHEMT
|
| File Size |
239.62K /
3 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
|
| Part No. |
RTAX1000SL-1CQ352EV RTAX2000S-1LG1152EV
|
| OCR Text |
...ethod requirement 1 destructive bond pull 5 2011, condition d extended sample 2 internal visual 2010, condition a 100% 3 serialization 100% 4 temperature cycling 1010, condition c, 10 cycles minimum 100% 5 constant acceleration 2001, y1 ori... |
| Description |
FPGA, 12096 CLBS, 1000000 GATES, CQFP352
FPGA, 21504 CLBS, 2000000 GATES, CBGA1152
|
| File Size |
6,007.68K /
198 Page |
View
it Online |
Download Datasheet |
| |
|
|
Filtronic Compound Semicond...
FILTRONIC[Filtronic Compound Semiconductors]
|
| Part No. |
FPD3000
|
| OCR Text |
...% Power-Added Efficiency
DRAIN bond PAD (4X) SOURCE bond PAD (2x)
FPD3000
GATE bond PAD (4X)
*
DESCRIPTION AND APPLICATIONS
DIE SIZE (m): 830 x 470 DIE THICKNESS: 75 m bondING PADS (m): >75 x 60
The FPD3000 is an AlGaAs/I... |
| Description |
2W POWER PHEMT
|
| File Size |
181.19K /
2 Page |
View
it Online |
Download Datasheet |
| |
|
|
FILTRONIC[Filtronic Compound Semiconductors]
|
| Part No. |
FPD2250
|
| OCR Text |
...% Power-Added Efficiency
DRAIN bond PAD (2X) SOURCE bond PAD (2x) GATE bond PAD (2X) DIE SIZE (m):: 680 x 470 DIE THICKNESS: 75 m bondING PADS (m): > 85 x 60
FPD2250
*
DESCRIPTION AND APPLICATIONS
The FPD2250 is an AlGaAs/InGaA... |
| Description |
1.5W POWER PHEMT
|
| File Size |
180.89K /
2 Page |
View
it Online |
Download Datasheet |
| |
|
|
Raytheon
|
| Part No. |
RMWP38001
|
| OCR Text |
... all die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges through the device. recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practic... |
| Description |
37-40 GHz power amplifier MMIC
|
| File Size |
311.25K /
6 Page |
View
it Online |
Download Datasheet |
| |
|
|
Amphenol, Corp.
FILTRONIC[Filtronic Compound Semiconductors]
|
| Part No. |
FPD200
|
| OCR Text |
...% Power-Added Efficiency
DRAIN bond PAD (1X) SOURCE bond PAD (2x) GATE bond PAD (1X) DIE SIZE (m): 400 x 400 DIE THICKNESS: 75 m bondING PADS (m): >80 x 80
FPD200
*
DESCRIPTION AND APPLICATIONS
The FPD200is an AlGaAs/InGaAs pse... |
| Description |
22 UF 10% 16V (CASE C;6032) TANT C CAP 一般用途PHEMT器件
GENERAL PURPOSE PHEMT
|
| File Size |
182.65K /
2 Page |
View
it Online |
Download Datasheet |
| |
|
|
FILTRONIC[Filtronic Compound Semiconductors]
|
| Part No. |
FPD2000V
|
| OCR Text |
... Plated Source Thru-Vias
DRAIN bond PAD (2X)
FPD2000V
2W POWER PHEMT
GATE bond PAD (2X)
*
DESCRIPTION AND APPLICATIONS
DIE SIZE (m): 650 x 800 DIE THICKNESS: 75m bondING PADS (m): >70 x 70
The FPD2000V is a discrete depl... |
| Description |
2W POWER PHEMT
|
| File Size |
503.79K /
3 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
