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  bias devices Datasheet PDF File

For bias devices Found Datasheets File :: 150+       Page :: | 1 | <2> | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    MICROSMD050F MICROSMD050F-2

Tyco Electronics
Part No. MICROSMD050F MICROSMD050F-2
Description Specification Status: Released
PolySwitch?PTC devices
PolySwitch垄莽PTC devices

File Size 24.03K  /  1 Page

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    VJ15PA0340 VJ32PA0340 VJ15MA0160 VJ15MA0340 VJ13MA0160 VJ14MA0160 VJ20MA0160 VJ20PA0160 VC20MA0160KBA

AVX Corporation
Part No. VJ15PA0340 VJ32PA0340 VJ15MA0160 VJ15MA0340 VJ13MA0160 VJ14MA0160 VJ20MA0160 VJ20PA0160 VC20MA0160KBA
Description Transient Voltage Suppression, ESD Protection devices & EMI devices

File Size 1,779.94K  /  10 Page

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    DTA115EET1 DTA124XET1G DTA143EE DTA144WET1 DTA114EET1 DTA114TET1 DTA114YET1 DTA123EET1 DTA123EET1G DTA123JET1 DTA124EET1

ONSEMI[ON Semiconductor]
Part No. DTA115EET1 DTA124XET1G DTA143EE DTA144WET1 DTA114EET1 DTA114TET1 DTA114YET1 DTA123EET1 DTA123EET1G DTA123JET1 DTA124EET1 DTA124XET1 DTA143EET1 DTA143EET1G DTA143TET1 DTA143ZET1 DTA144EET1 DTA115EE DTA124XE DTA144EE DTA123EE
Description bias Resistor Transistor
PNP Silicon Surface Mount Transistors with Monolithic bias Resistor Network

File Size 133.88K  /  12 Page

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    PROMAX-JOHNTON
Part No. PJ3100
Description 7V; 300mA CMOS LDO with enable. For battery-powered devices, personal communication devices

File Size 467.58K  /  9 Page

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    LVR016K-2 LVR100S LVRL100 LVRL100S LVRL200S LVR005N LVR005NK LVR005NK-2 LVR005NS LVR005NS-2 LVR008N LVR008NK LVR008NK-2

Tyco Electronics
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Part No. LVR016K-2 LVR100S LVRL100 LVRL100S LVRL200S LVR005N LVR005NK LVR005NK-2 LVR005NS LVR005NS-2 LVR008N LVR008NK LVR008NK-2 LVR008NS LVR008NS-2 LVR012 LVR012K LVR033K-2 LVR055 LVR055K LVR055S LVR055S-2 LVRL200 LVR033S-2 LVR040 LVRL075 LVRL075S LVRL125 LVRL125S LVRL135 LVRL135S LVR040K LVR200S LVR012S-2 LVR016S-2 LVR012K-2 LVR075S
Description PolySwitch Resettable devices Line-Voltage-Rated devices

File Size 207.50K  /  10 Page

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    EPC1

Altera Corporation
Part No. EPC1
Description Configuration devices for ACEX, APEX, FLEX & Mercury devices

File Size 198.36K  /  28 Page

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    EPC1064 EPC1064V EPC1441 EPC1213

Altera Corporation
Part No. EPC1064 EPC1064V EPC1441 EPC1213
Description Configuration devices for ACEX, APEX, FLEX & Mercury devices

File Size 202.29K  /  28 Page

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    EPC1064V EPC1213 EPC1441

Altera Corporation
Part No. EPC1064V EPC1213 EPC1441
Description Configuration devices for ACEX/ APEX/ FLEX & Mercury devices

File Size 207.71K  /  28 Page

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    HP[Agilent(Hewlett-Packard)]
Part No. HSMS-2852 HSMS-285B HSMS-285C HSMS-285L HSMS2850 DEMO-HSMS285-0
Description 2.45 GHz TAG circuit using the HSMS-2850 zero bias Schottky diode
Surface Mount Zero bias Schottky Detector Diodes
2.45 GHz标签电路使用硬件安全模块- 2850零偏压肖特基二极

File Size 93.26K  /  12 Page

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    CREE POWER
Part No. W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
Description Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

File Size 273.34K  /  17 Page

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For bias devices Found Datasheets File :: 150+       Page :: | 1 | <2> | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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