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  BD139 Datasheet PDF File

For BD139 Found Datasheets File :: 34+       Page :: | 1 | <2> | 3 | 4 |   

    Continental Device India Li...
Continental Device Indi...
Part No. BD139 BD135
Description NPN EPITAXIAL SILICON POWER TRANSISTORS

File Size 238.25K  /  4 Page

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HUA FENG CIRCUIT





    BD135 BD139

Savantic, Inc.
Part No. BD135 BD139
Description Silicon NPN Power Transistors

File Size 106.57K  /  3 Page

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    BD135 BD139

Comset Semiconductor
Part No. BD135 BD139
Description SILICON PLANAR EPITAXIAL POWER TRANSISTORS

File Size 64.72K  /  3 Page

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    BD135 BD139

Central Semiconductor Corp
Part No. BD135 BD139
Description NPN SILICON TRANSISTOR

File Size 112.74K  /  2 Page

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    BD135 BD139

Inchange Semiconductor Company Limited
Inchange Semiconductor Comp...
Part No. BD135 BD139
Description Silicon NPN Power Transistors

File Size 35.35K  /  3 Page

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    BD137 BD139

Inchange Semiconductor Company Limited
Part No. BD137 BD139
Description Silicon NPN Power Transistors

File Size 113.72K  /  3 Page

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    HBD139

HSMC[Hi-Sincerity Mocroelectronics]
Part No. HBD139
Description NPN POWER TRANSISTORS

File Size 35.48K  /  3 Page

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    BD139T

SEMTECH ELECTRONICS LTD.
Part No. BD139T
Description NPN Silicon Epitaxial Power Transistor

File Size 213.35K  /  2 Page

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    Tiger Electronic Co.,Ltd
Part No. BD140 BD139
Description Complementary Silicon Power Ttransistors

File Size 49.94K  /  1 Page

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    HIROSE ELECTRIC Co., Ltd.
Part No. BD139-25 BD135-25 BD137-25
Description Triac; Thyristor Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):800mA; Gate Trigger Current (QI), Igt:5mA; Current, It av:0.8A; Leaded Process Compatible:Yes RoHS Compliant: Yes
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 1.5A I(C) | TO-126
Diac Thyristor; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Package/Case:Axial Leaded; Peak Surge Current:2A; Breakover Voltage Min:30V RoHS Compliant: Yes 晶体管|晶体管|叩| 45V的五(巴西)总裁| 1.5AI(丙)|126

File Size 35.46K  /  3 Page

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