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    2SA1096 2SA1096A 2SC2497A 2SC2497

PANASONIC[Panasonic Semiconductor]
Part No. 2SA1096 2SA1096A 2SC2497A 2SC2497
OCR Text ...h and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Pan...
Description    Silicon NPN epitaxial planar type(For low-frequency power amplification)

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    2SA1121 2SA1121SC

HIROSE ELECTRIC Co., Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SA1121 2SA1121SC
OCR Text ...er voltage Note: Grade Mark hFE B SB 60 to 120 C SC 100 to 200 VBE 1. The 2SA1121 is grouped by h FE as follows. See characteristic curves of 2SA673. 2 2SA1121 Maximum Collector Dissipation Curve Collector power dissipation Pc ...
Description TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 500MA I(C) | SOT-23 晶体管|晶体管|进步党| 35V的五(巴西)总裁| 500mA的一(c)| SOT - 23封装
Silicon PNP Epitaxial
Silicon PNP Transistor

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    2SA1122

HITACHI[Hitachi Semiconductor]
Part No. 2SA1122
OCR Text ...er voltage Note: Grade Mark hFE B CC 160 to 320 C CD 250 to 500 V(BR)EBO I CBO I EBO hFE* 160 -- -- D CE VCE(sat) VBE V V I C = -10 mA, IB = -1 mA VCE = -12 V, IC = -2 mA 1. The 2SA1122 is grouped by hFE as follows. 400 to...
Description Silicon PNP Transistor
Silicon PNP Epitaxial

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    2SA1188 2SA1189 2SA1189E 2SA1189D

ZETTLER electronics GmbH
HITACHI[Hitachi Semiconductor]
Part No. 2SA1188 2SA1189 2SA1189E 2SA1189D
OCR Text ..., I C = -2 mA*2 I C = -10 mA, I B = -1 mA*2 Min -90 -90 -5 -- -- 250 -- -- -- -- Typ -- -- -- -- -- -- -120 -- -120 -- -5 -- -- 250...to 500 E 400 to 800 See characteristic curves of 2SA1190 and 2SA1191. 2 2SA1188, 2SA1189 M...
Description 5-Pin &#181;P Supervisory Circuits with Watchdog and Manual Reset 5个引amp;#181;带看门狗和手动复位的P监控电路
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 100MA I(C) | TO-92
Silicon PNP Epitaxial

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    2SA1190 2SA1191

HITACHI[Hitachi Semiconductor]
Part No. 2SA1190 2SA1191
OCR Text ..., I C = -2 mA*2 I C = -10 mA, I B = -1 mA*2 Min -90 -90 -5 -- -- 250 -- -- -- -- -- Typ -- -- -- -- -- -- -120 -- -120 -- -5 -- -- ...to input en -- 0.7 -- -- 0.7 -- nV/ Hz Notes: 1. The 2SA1190 and 2SA1191 ...
Description Silicon PNP Epitaxial

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    2SA2057

PANASONIC[Panasonic Semiconductor]
Part No. 2SA2057
OCR Text ...ckage Internal Connection C B E Note) *: Non-repetitive peak collector current Electrical Characteristics TC = 25C 3C Parameter...to 250 P 160 to 320 SJD00284BED 1 2SA2057 PC Ta 35 (1) TC = Ta (2) Without heat sink -6...
Description Silicon PNP epitaxial planar type

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    2SA2064

PANASONIC[Panasonic Semiconductor]
Part No. 2SA2064
OCR Text ...ckage Internal Connection C B E Electrical Characteristics TC = 25C 3C Parameter Collector-emitter voltage (Base open) Collector-b...to emitter saturation voltage VCE(sat) (V) VCE = -2 V -10 VCE(sat) IC IC / IB = 20 Collect...
Description Silicon PNP epitaxial planar type

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    2SA2067

PANASONIC[Panasonic Semiconductor]
Part No. 2SA2067
OCR Text ...ckage Internal Connection C B E Electrical Characteristics TC = 25C 3C Parameter Collector-emitter voltage (Base open) Collector-b...to 250 P 160 to 320 Publication date: January 2003 SJD00286BED 1 2SA2067 IC VBE -7 VC...
Description Silicon PNP epitaxial planar type

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    2SA673A 2SA673AK 2SA673A_K

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SA673A 2SA673AK 2SA673A_K
OCR Text ...y hFE as follows. 2. Pulse test B 60 to 120 C 100 to 200 D 160 to 320 See 2SA673A except for the above - mentioned characteristic curves. 3 2SA673A(K) Switching Time Test Circuit ton, toff Test Circuit D.U.T. 6k 50 6V 6k 0.002 +- ...
Description Silicon PNP Epitaxial

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    2SA673 2SA673A

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SA673 2SA673A
OCR Text ... -20 V, IE = 0 I C = -150 mA, I B = -15 mA*2 VCE = -3 V, I C = -10 mA VCE = -3 V, I C = -500 mA*2 VCE = -3 V, I C =-10 mA Base to emitter voltage VBE -0.64 -- -0.64 -- Notes: 1. The 2SA673 and 2SA673A are grouped by h FE as foll...
Description Silicon PNP Epitaxial(小信号晶体管)

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