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    N435

Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
Part No. N435
OCR Text ... of those positions at a future amendment of this international standard. 4.17: dense collection: a collection in which every code position within the identified range(s) has a character allocated to it. note - the repertoire of a dense col...
Description ISO/IEC JTC 1/SIC 2/WG 3 7-bit and 8-bit codes and their extension SECRETARIAT : ELOT 的ISO / IEC裕廊1/SIC 2/WG 3 7位和8位代码和扩展秘书处:埃洛

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    Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K7Q163652A K7Q161852A
OCR Text ...History 1. Initial document. 1. amendment 1) Page 3,4 PIN NAME DESCRIPTION W (4A) : from Read Control Pin to Write Control R (8A) : from Write Control Pin to Read Control BW0(7B),BW1(7A),BW2(5A),BW3(5B) : from Read Control Pin to Byte Wrtie...
Description 512Kx36 & 1Mx18 QDRTM b2 SRAM
Electrical Outlet Connector; Voltage Rating:125V; Contact Plating:Nickel; Current Rating:30A RoHS Compliant: Yes 512Kx36

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    Advanced Micro Devices, Inc.
Part No. AM29DL800BB120SF AM29DL800BB70SF AM29DL800BB90SF AM29DL800BT70SF AM29DL800BT120SF AM29DL800BT90SF AM29DL800BT70WBD AM29DL800BT120WBD AM29DL800BB70WBD AM29DL800BB90WBD AM29DL800BB120WBD AM29DL800BT70WBK AM29DL800BT90WBK AM29DL800BT120WBK AM29DL800BB120WBK AM29DL800BB70WBK AM29DL800BB90WBK AM29DL800BB70ED AM29DL800BB90SK
OCR Text amendment 4 issue date december 4, 2006 the following document contains information on sp ansion memory products. although the document is marked with the name of the company that orig inally developed the specification, spansion wi...
Description 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 8兆位 M中的x 8-Bit/512亩x 16位).0伏的CMOS只,同时作业快闪记忆

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    K7Q161854A K7Q161854A-FC10 K7Q161854A-FC13

Samsung semiconductor
Part No. K7Q161854A K7Q161854A-FC10 K7Q161854A-FC13
OCR Text ...History 1. Initial document. 1. amendment 1) Page 3,4 PIN NAME DESCRIPTION W (4A) : from Read Control Pin to Write Control R (8A) : from Write Control Pin to Read Control BW0(7B),BW1(7A),BW2(5A),BW3(5B) : from Read Control Pin to Byte Wrtie...
Description 512Kx36-bit, 1Mx18-bit QDR SRAM

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    K7Q161852A

Samsung semiconductor
Part No. K7Q161852A
OCR Text ...History 1. Initial document. 1. amendment 1) Page 3,4 PIN NAME DESCRIPTION W (4A) : from Read Control Pin to Write Control R (8A) : from Write Control Pin to Read Control BW0(7B),BW1(7A),BW2(5A),BW3(5B) : from Read Control Pin to Byte Wrtie...
Description 512Kx36 & 1Mx18 QDRTM b2 SRAM

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    AM29030

AMD
Part No. AM29030
OCR Text amendment Am29030TM and Am29035 TM RISC Microprocessors with 8-Kbyte/4-Kbyte Instruction Cache Advanced Micro Devices This amendment adds preliminary information on switching characteristics over commercial operating ranges for th...
Description RISC Microprocessors with 8-Kbyte/4-Kbyte Instruction Cache

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    K7Q161854A-FC16 K7Q163654A-FC20 K7Q161854A-FC20 K7Q163654A K7Q163654A-FC10 K7Q163654A-FC13 K7Q163654A-FC16 K7Q161854A-FC

SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Part No. K7Q161854A-FC16 K7Q163654A-FC20 K7Q161854A-FC20 K7Q163654A K7Q163654A-FC10 K7Q163654A-FC13 K7Q163654A-FC16 K7Q161854A-FC10
OCR Text ...History 1. Initial document. 1. amendment 1) Page 3,4 PIN NAME DESCRIPTION W (4A) : from Read Control Pin to Write Control R (8A) : from Write Control Pin to Read Control BW0(7B),BW1(7A),BW2(5A),BW3(5B) : from Read Control Pin to Byte Wrtie...
Description 1M X 18 QDR SRAM, 3 ns, PBGA165
512Kx36-bit, 1Mx18-bit QDR SRAM

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