...2.54
1
2
1.0 2.54
6.2 5.2
0.3 0.6 7.8
5.08 10.0 6.0
2.5
0.7
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allow...
...
-12
ID
(A)
-16
-3.5 V
-16
-12 Tc = 75C
Drain Current
-8 -2.5 V -4 VGS = -2 V 0 -2 -4 -6 Drain to Source Voltage -8...08 C/W, Tc = 25 C
PDM PW T
0.03
0.02 1 lse 0.0 t pu o h 1s
D=
PW T
0.01 10
100
...
Description
Silicon P Channel MOS FET High Speed Power Switching
...aracteristics -50 -10 V -8 V -4.5 V -50
Typical Transfer Characteristics V DS = -10 V Pulse Test Tc = -25 C 25 C
(A) ID Drain Current
...08 V GS = -4 V -20 A 0.04 -10 V 0 -40 0 40 80 120 160 Case Temperature Tc (C) -5, -10 A
Forward T...
Description
Silicon P Channel MOS FET High Speed Power Switching
...put Characteristics -50 -8 V -3.5 V Pulse Test -50
Typical Transfer Characteristics V DS = -10 V
I D (A)
-5 V -30 -4 V VGS = -10 V ...08 I D = -50 A V GS = -4 V 0.04 -10 A
-20 A -50 A -10,-20A
Tc = -25 C 10 3 1 0.3 V DS = -10 V ...
Description
Silicon P Channel MOS FET High Speed Power Switching
...ut Current - Low Min 4.75 0 Typ 5.0 25 Max 5.25 70 - 0.4 8.0 Unit V C mA mA
16 1
PLASTIC N SUFFIX CASE 648
16 1
SOIC D SUFFIX CASE...08 ISSUE R
-A-
16 9 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING D...
Description
Hex D Flip-Flop LOW POWER SCHOTTKY From old datasheet system
...ut Current - Low Min 4.75 0 Typ 5.0 25 Max 5.25 70 - 0.4 8.0 Unit V C mA mA
PLASTIC N SUFFIX CASE 648
16 1
SOIC D SUFFIX CASE 751B
...08 ISSUE R
-A-
16 9 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING D...
Description
From old datasheet system LOW POWER SCHOTTKY Quad D Flip-Flop