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For 28m Found Datasheets File :: 363 Search Time::1.031ms
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				http:// Alpha & Omega Semiconductors
Part No.	AO3400 AO3400L
OCR Text	...D = 5.8 A (VGS = 10V) RDS(ON) < 28m (VGS = 10V) RDS(ON) < 33m (VGS = 4.5V) RDS(ON) < 52m (VGS = 2.5V) TO-236 (SOT-23) Top View G D S G D S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source ...
Description	N-Channel Enhancement Mode Field Effect Transistor
File Size	103.12K / 4 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFIZ34V IRFIZ34VPBF
OCR Text	... l D VDSS = 60V RDS(on) = 28m G S ID = 20A Advanced HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined w...
Description	60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=60V, Rds(on)=28mohm, Id=20A) Lsolated Base Power HEX-pak Assembly Half Bridge Configuration
File Size	103.27K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFZ34VL IRFZ34VS
OCR Text	...FZ34VL VDSS = 60V RDS(on) = 28m G S ID = 30A D2Pak IRFZ34VS TO-262 IRFZ34VL Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Co...
Description	60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 60V Single N-Channel HEXFET Power MOSFET in a TO-262 package HEXFET? Power MOSFET Advanced Process Technology
File Size	126.38K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRFZ34V
OCR Text	... l D VDSS = 60V RDS(on) = 28m G S ID = 30A Advanced HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined w...
Description	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 30A I(D) \| TO-220AB HEXFET? Power MOSFET
File Size	102.09K / 8 Page	View it Online	Download Datasheet

				ALPHA & OMEGA Semiconductor ETC[ETC] List of Unclassifed Manufacturers
Part No.	AO6402 AO6402L
OCR Text	...S (V) = 30V ID = 6.9A RDS(ON) < 28m (VGS = 10V) RDS(ON) < 42m (VGS = 4.5V) TSOP-6 Top View D D G 16 25 34 D D S D G S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source V...
Description	N-Channel Enhancement Mode Field Effect Transistor
File Size	108.08K / 4 Page	View it Online	Download Datasheet

				GENERAL SEMICONDUCTOR
Part No.	GF4412
OCR Text	...8 (5.79) 1 4 VDS 30V RDS(ON) 28m ID 7A (R) Dimensions in inches and (millimeters) 0.019 (0.48) x 45 0.010 (0.25) 0.05 (1.27) 0.04 (1.02) 0.245 (6.22) Min. 0.009 (0.23) 0.007 (0.18) 0.165 (4.19) 0.155 (3.94) 0.050 (1.27) ...
Description	N-Channel Enhancement-Mode MOSFET
File Size	149.18K / 5 Page	View it Online	Download Datasheet

				OPTEK[OPTEK Technologies] ETC Optek Technology
Part No.	AOP604
OCR Text	... -30V ID = 7.5A -6.6A RDS(ON) < 28m < 35m (VGS = 10V) < 43m < 58m (VGS = 4.5V) Schottky VDS=30V, I F=3A, VF<0.5V@1A PDIP-8 S1/A G1 S2 G2 1 2 3 4 8 7 6 5 D1/K D1/K D2 D2 D2 D1 K N-ch P-ch G2 S2 G1 S1 A Absolute Maximum Ratin...
Description	LJT 12C 8#20 4#16 SKT WALL REC Complementary Enhancement Mode Field Effect Transistor
File Size	532.90K / 11 Page	View it Online	Download Datasheet

				AOSMD[Alpha & Omega Semiconductors] ETC
Part No.	AO4604
OCR Text	...S (V) = 30V ID = 6.9A RDS(ON) < 28m (VGS=10V) < 42m (VGS=4.5V) p-channel -30V -5A RDS(ON) < 52m (VGS = 10V) < 87m (VGS = 4.5V) D2 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 D1 G2 S2 G1 S1 SOIC-8 n-channel p-channel Abso...
Description	Complementary Enhancement Mode Field Effect Transistor 增强模式互补场效应晶体管
File Size	432.99K / 9 Page	View it Online	Download Datasheet

For 28m Found Datasheets File :: 363 Search Time::1.031ms
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