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ST Microelectronics
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| Part No. |
P10NK80Z
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| OCR Text |
...Fall Time Cross-over Time
65 17 13 10 25
ns ns ns ns ns
3/14
www.DataSheet4U.com
2 Electrical characteristics
STP10NK80ZF...9A, di/dt = 100A/s, VDD=45 V, Tj=150C 645 6.4 20 Test Conditions Min. Typ. Max. 9 36 1.6 Unit A A V ... |
| Description |
Search --To STP10NK80Z
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| File Size |
367.86K /
14 Page |
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KEC semiconductor
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| Part No. |
KHB9D0N50F1
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| OCR Text |
...3 0.1 + _ 6.5 p
2006. 1. 17 2/7 khb9d0n50p1/f1 revision no : 0 electrical characteristics (tc=25 ) characteristic symbol test condi...9a v gs =10v (note4,5) - 34.6 40 nc gate-source charge q gs - 5.9 - gate-drai... |
| Description |
(KHB9D0N50F1 / KHB9D0N50P1) High Voltage MOSFETs
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| File Size |
106.19K /
7 Page |
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it Online |
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ZETEX[Zetex Semiconductors]
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| Part No. |
ZXMN10A25GTA ZXMN10A25G
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| OCR Text |
... VGS ID Limit 100 20 4 3.2 2.9 17 5.4 17 2 16 3.9 31 -55 to +150 A A A W mW/C W mW/C C Unit V V A
Thermal resistance Parameter
Junction...9A, di/dt=100A/ s td(on) tr td(off) tf Qg Qg Qgs Qgd 4.9 3.7 18 9.4 9.6 17 3.8 5.4 ns ns ns ns nC nC... |
| Description |
100V SOT223 N-channel enhancement mode MOSFET
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| File Size |
568.51K /
8 Page |
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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AON7406
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| OCR Text |
...e 1.2 1.8 2.4 v i d(on) 50 a 14 17 t j =125c 20 24 18 23 m w g fs 40 s v sd 0.75 1 v i s 15 a c iss 600 740 888 pf c oss 77 110 145 pf c rss...9a drain-source breakdown voltage m a v ds =v gs i d =250 m a v ds =0v, v gs = 16v i s =1a,v gs =0... |
| Description |
30V N-Channel MOSFET
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| File Size |
463.76K /
6 Page |
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it Online |
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