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For 100.0m Found Datasheets File :: 6701 Search Time::3.219ms
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				Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
Part No.	2SB1072 2SB1072L 2SB1072S
OCR Text	... VCEO VEBO IC ID* 1 Rating -100 -80 -7 -4 4 -8 20 150 -55 to +150 Unit V V V A A A W C C I C(peak) PC * Tj Tstg 1 Electrical C...0m (T C 10 -0.3 -0.1 -0.03 Ta = 25C 1 Shot Pulse s ) =2 C 5 0 50 100 Case tempe...
Description	Silicon PNP Triple Diffused 三重扩散硅进步党
File Size	34.72K / 6 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SB1079
OCR Text	... IB PC * Tj Tstg 1 Ratings -100 -100 -7 -20 -30 -3 100 150 -55 to +150 Unit V V V A A A W C C Electrical Characteristics (Ta = 25C...0m 40 0 50 100 Case temperature TC (C) 150 -10 -30 -100 -300 Collector to emitter vol...
Description	Silicon PNP Triple Diffused
File Size	35.32K / 6 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SB1091
OCR Text	...-- -- -- 1.0 2.5 0.5 Max -- -- -100 -10 20000 -1.5 -3.0 -2.0 -3.5 -- -- -- V V V V s s s Unit V V A A Test conditions I C = -25 mA, RBE = I...0m DC -1.0 -0.5 -0.2 Ta = 25C -0.1 1 Shot pulse -0.05 s er ati on Op 20 0 50 1...
Description	Silicon PNP Triple Diffused
File Size	34.50K / 6 Page	View it Online	Download Datasheet

				ROHM[Rohm]
Part No.	2SB1181 2SB1260 2SB1241
OCR Text	...hFE Min. -80 -80 -5 82 120 Typ. 100 100 25 Max. -1 -1 -0.4 390 390 Unit V V V A A V MHz MHz pF VCE=-5V, IE=50mA, f=30MHz VCE=-10V, IE=50mA, ...0m =1 PW PW 200 100 50 s 0 =1 ms m 00 =1 PW 00 DC m s s -0.2 -0.1 -0...
Description	Power Transistor
File Size	78.57K / 3 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor] http://
Part No.	2SB791 2SB791K
OCR Text	...-- -- -- 0.5 1.6 1.5 Max -- -- -100 -10 20000 -1.5 -3.0 -2.0 -3.5 -- -- -- V V V V s s s Unit V V A A Test conditions I C = -25 mA, RBE = I...0m s =2 io n (TC 20 ) 5C Ta = 25C 1 Shot Pulse 0 50 100 Case temperature TC...
Description	Silicon PNP Epitaxial
File Size	36.18K / 6 Page	View it Online	Download Datasheet

				SANKEN[Sanken electric]
Part No.	2SC5071
OCR Text	...SC5071 500 400 10 12(Pulse24) 4 100(Tc=25C) 150 -55 to +150 Unit V V V A A W C C Application : Switching Regulator and General Purpose Ex...0m A 60 0m A 10 V B E( sat) 1 -55C (Case Temp) Collector Current I C (A) 8 400m A 8 ...
Description	Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)
File Size	23.88K / 1 Page	View it Online	Download Datasheet

				SANKEN[Sanken electric]
Part No.	2SD2439
OCR Text	... 0.5 1 5 10 50 100 200 0 0 1 -30C 125 2 C (Cas (Ca e Te mp) mp) 2 Collector-Emitt...0m Ma xim um Powe r Dissipation P C( W) s s 60 60 Typ 1 0.5 Without Heatsink Na...
Description	Silicon NPN Triple Diffused Planar Transistor(Audio, Series Regulator and General Purpose)
File Size	24.85K / 1 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1302L IRF1302S
OCR Text	...5C, IS = 104A, VGS = 0V --- 66 100 ns TJ = 25C, IF = 104A --- 130 200 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRF1302S/IRF1302L 10000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V ...
Description	Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A? Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A?) Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A) Power MOSFET(Vdss=20V/ Rds(on)=4.0mohm/ Id=174A)
File Size	225.99K / 11 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1302
OCR Text	...25C, IS = 104A, VGS = 0V --- 66 100 ns TJ = 25C, IF = 104A --- 130 200 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRF1302 10000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM...
Description	Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A? Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A?) Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A) Power MOSFET(Vdss=20V/ Rds(on)=4.0mohm/ Id=180A)
File Size	516.95K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF2804 IRF2804L IRF2804S
OCR Text	...--- --- 56 67 280 A 1080 1.3 84 100 V ns nC Conditions MOSFET symbol showing the integral reverse G S D p-n junction diode. TJ = 25C, IS = 75A, VGS = 0V TJ = 25C, IF = 75A, VDD = 20V di/dt = 100A/s f f Intrinsic turn-on tim...
Description	40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 40V Single N-Channel HEXFET Power MOSFET in a TO-262 package 40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
File Size	273.77K / 12 Page	View it Online	Download Datasheet

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