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-5.8a Datasheet PDF File

For -5.8a Found Datasheets File :: 260 Search Time::1.391ms
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				OKI ELECTRIC INDUSTRY CO LTD
Part No.	MSM6650SS
OCR Text	58a-xxx, msm66p54-xx, msm66p56-xx , msm6650 internal mask rom voice synthesis ic, internal one-time-programmable (otp) rom voice synthesis ic, external rom drive voice synthesis ic 1/46 this document contains minimum specifications. for f...
Description	4194.3 SEC, SPEECH SYNTHESIZER, PDIP64
File Size	426.25K / 46 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	ISL9N312AS ISL9N312AP3 ISL9N312AS3ST
OCR Text	...tance VGS = VDS, ID = 250A ID = 58A, VGS = 10V ID = 32A, VGS = 4.5V 1 0.010 0.017 3 0.012 0.020 V Dynamic Characteristics CISS COSS CRSS Qg(TOT) Qg(5) Qg(TH) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Tot...
Description	N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
File Size	138.82K / 11 Page	View it Online	Download Datasheet

				WINCHESTER ELECTRONICS CORP
Part No.	600-800-2850Y 601-601-0000Y
OCR Text	...-9b,214 600-900-1160y rg-58,58a,141a 600-900-1165y rg-59,62a,210 ? see page 116 for cable assembly procedures: cm-03 winchester/retconn 400 park road ? watertown, connecticut 06795-5000 ? phone: (860) 945-5000 ? fax: (860) 945...
Description	CABLE TERMINATED, MALE, N CONNECTOR, CLAMP, PLUG FEMALE-FEMALE, RF STRAIGHT ADAPTER, JACK
File Size	129.29K / 6 Page	View it Online	Download Datasheet

				Microsemi Corporation
Part No.	APTM120U10DAG08
OCR Text	...resistance v gs = 10v, i d = 58a 100 120 m v gs(th) gate threshold voltage v gs = v ds , i d = 20ma 3 5 v i gss gate ? source leakage current v gs = 30 v, v ds = 0v 400 na dynamic characteristics symb...
Description	Single switch with Series diodes MOSFET Power Module
File Size	213.35K / 6 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50M80LVR APT50M80B2VR APT50M80B2VR_03 APT50M80B2VR03
OCR Text	...d gate layout. T-MaxTM 500V 58A 0.080 TO-264 * Identical Specifications: T-MAXTM or TO-264 Package * Faster Switching * Lower Leakage * Avalanche Energy Rated G S D MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL I...
Description	POWER MOS V
File Size	91.98K / 4 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	BSS209PW BSS209PW06
OCR Text	... reverse diode d v /d t i s =-0.58a, v ds =-16v, d i /d t =200a/s, t jmax =150c d v /d t -6 kv/s gate source voltage v gs 12 v power dissipation t a =25c p tot 0.52 w operating and storage temperature t j , t st g -55... +150 c iec cli...
Description	OptiMOS-P Small-Signal-Transistor
File Size	97.65K / 8 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50M80LVFR APT50M80B2VFR APT50M80B2VFR_03 APT50M80B2VFR03
OCR Text	58A 0.080 Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves ...
Description	POWER MOS V
File Size	93.45K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50M65JLL_03 APT50M65JLL APT50M65JLL03
OCR Text	58A 0.065 POWER MOS 7 (R) R MOSFET G S D S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by s...
Description	POWER MOS 7 R MOSFET
File Size	99.40K / 5 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50M65JFLL_03 APT50M65JFLL APT50M65JFLL03
OCR Text	58A S G D 0.065 S POWER MOS 7 (R) R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by s...
Description	POWER MOS 7 R FREDFET
File Size	99.79K / 5 Page	View it Online	Download Datasheet

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