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v-2.55 Datasheet PDF File

For v-2.55 Found Datasheets File :: 257977 Search Time::8.109ms
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				Renesas Electronics Corporation
Part No.	FS5AS-2-T13
OCR Text	...features ? drive voltage : 10 v ? v dss : 100 v ? r ds(on) (max) : 0.47 ? ? i d : 5 a ? recovery time of the integrated fa st recovery diode (typ.) : 80 ns outline 1 1 3 3 2, 4 2 4 1. gate 2. drain 3. source 4. drain ...
Description	High-Speed Switching Use Nch Power MOS FET
File Size	189.85K / 7 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	FS10AS-2-T13
OCR Text	...features ? drive voltage : 10 v ? v dss : 100 v ? r ds(on) (max) : 0.23 ? ? i d : 10 a ? recovery time of the integrated fa st recovery diode (typ.) : 100 ns outline 1 1 3 3 2, 4 2 4 1. gate 2. drain 3. source 4. drai...
Description	High-Speed Switching Use Nch Power MOS FET
File Size	189.68K / 7 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	FS50SMJ-2
OCR Text	...5 ~ +150 -55 ~ +150 4.8 Unit V V A A A A A W C C g Feb.1999 L = 50H MITSUBISHI Nch POWER MOSFET FS50SMJ-2 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) ...
Description	HIGH-SPEED SWITCHING USE
File Size	41.01K / 4 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	FS30VS-2 FS100VSJ-03
OCR Text	...0 -55 ~ +150 1.2 4.5 Unit V V A A A A A W C C g Feb.1999 L = 100H (1.5) MITSUBISHI Nch POWER MOSFET FS30VS-2 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) ...
Description	HIGH-SPEED SWITCHING USE
File Size	37.39K / 4 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	FS30VSJ-2
OCR Text	...0 -55 ~ +150 1.2 4.5 Unit V V A A A A A W C C g Feb.1999 L = 100H (1.5) MITSUBISHI Nch POWER MOSFET FS30VSJ-2 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON)...
Description	HIGH-SPEED SWITCHING USE
File Size	37.95K / 4 Page	View it Online	Download Datasheet

				Sony Corporation
Part No.	CXDB2951GA-2 CXD2B951GA-2 CXD2951GA-2
OCR Text	...to +6 -40 to +85 -50 to +150 V V V V V C C * 32 bits RISC CPU (ARM7TDMI) * 288K-bytes Program ROM * 72K-bytes Data RAM Power is suppli...2.6 to 3.6 V Under operation in backup mode: BKUPIOVDD 2.5 (Min.) V * Supply voltage core CVDD 1.62...
Description	GPS IC
File Size	296.48K / 26 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	FS70KM-2-A8 FS70KM-2
OCR Text	... * * * * * * Drive voltage : 10 V VDSS : 100 V rDS(ON) (max) : 20 m ID : 70 A Integrated Fast Recovery Diode (TYP.) : 120 ns Viso : 2000 V ...2 1 1. Gate 2. Drain 3. Source 1 2 3 3 Applications Motor control, Lamp contro...
Description	High-Speed Switching Use Nch Power MOS FET
File Size	167.34K / 7 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	FS50SMJ-2
OCR Text	...5 ~ +150 -55 ~ +150 4.8 Unit V V A A A A A W C C g Feb.1999 L = 50H MITSUBISHI Nch POWER MOSFET FS50SMJ-2 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) ...
Description	MITSUBISHI Nch POWER MOSFET
File Size	78.64K / 5 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	FS10ASJ-2 FS10ASJ-2-T13
OCR Text	...es * * * * * Drive voltage : 4 V VDSS : 100 V rDS(ON) (max) : 0.19 ID : 10 A Integrated Fast Recovery Diode (TYP.) : 95 ns Outline RENESAS Package code: PRSS0004ZA-A (Package name: MP-3A) 2, 4 4 1 12 3 1. 2. 3. 4. Gate Drain...
Description	High-Speed Switching Use Nch Power MOS FET
File Size	167.06K / 7 Page	View it Online	Download Datasheet

For v-2.55 Found Datasheets File :: 257977 Search Time::8.109ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |