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For recovery Found Datasheets File :: 80763 Search Time::1.688ms
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				ON Semiconductor
Part No.	NVMD6P02 NVMD6P02R2G NTMD6P02R2G NTMD6P02R2SG
OCR Text	...diode exhibits high speed, soft recovery ? avalanche energy specified ? these devices are pb ? free and are rohs compliant ? nvmd prefix for automotive and other applications requiring unique site and control change requirements; aec ? q101...
Description	Power MOSFET 6 A, 20 V, P?Channel SOIC?, Dual
File Size	119.53K / 6 Page	View it Online	Download Datasheet

				SemeLAB SEME-LAB[Seme LAB] Air Cost Control
Part No.	IRF240SMD
OCR Text	...lse Avalanche Energy Peak Diode recovery 3 Operating and Storage Temperature Range Package Mounting Surface Temperature (for 5 sec) Thermal Resistance Junction to Case Thermal Resistance Junction to PCB (Typical) 2 20V (VGS = 0 , Tcase ...
Description	N.CHANNEL POWER MOSFET N-Channel Power MOSFET(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)) N沟道功率MOSFET（减振钢板基本：200伏，身份证（续）3.9A，的Rds（on）：0.18Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00伏，身份证（续）3.9A时，RDS（对）：0.18Ω））
File Size	22.29K / 2 Page	View it Online	Download Datasheet

				SemeLAB SEME-LAB[Seme LAB]
Part No.	IRF250SMD
OCR Text	...lse Avalanche Energy Peak Diode recovery 3 Operating and Storage Temperature Range Package Mounting Surface Temperature (for 5 sec) Thermal Resistance Junction to Case Thermal Resistance Junction to PCB (Typical) 2 20V (VGS = 0 , Tcase ...
Description	N.CHANNEL POWER MOSFET
File Size	23.37K / 2 Page	View it Online	Download Datasheet

				Vishay Siliconix
Part No.	SI1499DH-T1-E3 SI1499DH08
OCR Text	... 0.7 - 1.2 v body diode reverse recovery time t rr i f = - 2.0 a, di/dt = 100 a/s, t j = 25 c 25 38 ns body diode reverse recovery charge q rr 711nc reverse recovery fall time t a 9 ns reverse recovery rise time t b 16 document number:...
Description	P-Channel 1.2-V (G-S) MOSFET
File Size	103.01K / 6 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRHNB7Z60 IRHNB8Z60
OCR Text	...ve Avalanche Energy Peak Diode recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight 75* 75* 300 300 2.4 20 500 75 30 0.35 -55 to 150 Pre-Irradiation IRHNB7Z60, IRHNB8Z60 Units A W W/K V mJ A mJ V/ns o...
Description	30Volt,0.009Ω,MEGA RAD HARD HEXFET(30V,0.009Ω,MEGA 抗辐射N沟道HEXFET晶体
File Size	110.79K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF2805L IRF2805S
OCR Text	...ve Avalanche EnergyW Peak Diode recovery dv/dt S Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 135V 96V 700 200 1.3 20 380 1220 See Fig.12a, 12b, 15, 16 2.0 -55 to + 175 300 (1.6mm from cas...
Description	55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package AUTOMOTIVE MOSFET
File Size	221.43K / 11 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF2807L IRF2807S IRF2807STRL-111 IRF2807STRR
OCR Text	...ive Avalanche Energy Peak Diode recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. 82 58 280 230 1.5 20 43 23 5.9 -55 to + 175 300 (1.6mm from ca...
Description	HEXFET Power MOSFET HEXFET功率MOSFET 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
File Size	122.50K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF2807
OCR Text	...ive Avalanche Energy Peak Diode recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. 82 58 280 230 1.5 20 43 23 5.9 -55 to + 175 300 (1.6mm from ca...
Description	Power MOSFET(Vdss=75V, Id=82A?) Power MOSFET(Vdss=75V, Id=82A)
File Size	149.88K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRHNA7Z60 IRHNA8Z60
OCR Text	...ve Avalanche Energy Peak Diode recovery dv/dt Operating Junction Storage Temperature Range Package Mounting surface Temperature Weight 75* 75* 300 300 2.4 20 500 75 30 0.35 -55 to 150 300 (for 5 sec.) 3.3 (typical) Pre-Irradiation IR...
Description	30Volt, 0.009Ω, RAD HARD HEXFET(30V, 0.009Ω,抗辐射N沟道HEXFET晶体
File Size	127.16K / 8 Page	View it Online	Download Datasheet

For recovery Found Datasheets File :: 80763 Search Time::1.688ms
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