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  drain Datasheet PDF File

For drain Found Datasheets File :: 91865    Search Time::1.235ms    
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    IRF7807VD2 IRF7807VD2TR

IRF[International Rectifier]
Part No. IRF7807VD2 IRF7807VD2TR
OCR Text ...olute Maximum Ratings Parameter drain-Source Voltage Gate-Source Voltage Continuous drain or Source Current (VGS 4.5V) Pulsed drain CurrentQ Power DissipationS Schottky and Body Diode Average ForwardCurrentT 25C 70C 25C 70C TJ, TSTG IF (AV...
Description 30V FETKY - MOSFET and Schottky Diode in a SO-8 package
FETKY MOSFET / SCHOTTKY DIODE
FETKY⑩ MOSFET / SCHOTTKY DIODE

File Size 113.54K  /  9 Page

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    IRF7807V

IRF[International Rectifier]
Part No. IRF7807V
OCR Text ...olute Maximum Ratings Parameter drain-Source Voltage Gate-Source Voltage Continuous drain or Source Current (VGS 4.5V) Pulsed drain Current Power Dissipation TA = 25C TA = 70C Junction & Storage Temperature Range Continuous Source Current ...
Description N Channel Application Specific MOSFET

File Size 126.34K  /  8 Page

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    IRF7807 IRF7807A IRF7807ATR IRF7807TR

IRF[International Rectifier]
Part No. IRF7807 IRF7807A IRF7807ATR IRF7807TR
OCR Text ...olute Maximum Ratings Parameter drain-Source Voltage Gate-Source Voltage Continuous drain or Source Current (VGS 4.5V) Pulsed drain Current Power Dissipation 25C 70C Junction & Storage Temperature Range Continuous Source Current (Body Diod...
Description 8.3 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET
Chip-Set for DC-DC Converters
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package

File Size 238.61K  /  8 Page

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    IRF7811AV IRF7811AVTR

International Rectifier
Part No. IRF7811AV IRF7811AVTR
OCR Text ...olute Maximum Ratings Parameter drain-Source Voltage Gate-Source Voltage Continuous drain or Source Current (VGS 4.5V) Pulsed drain Current Power Dissipation TA = 25C TL = 90C Junction & Storage Temperature Range Continuous Source Current ...
Description Si, SMALL SIGNAL, FET, MS-012AA
N-Channel Application-Specific MOSFETs

File Size 85.36K  /  6 Page

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    IRF7811A IRF7809A IRF7811ATR

International Rectifier
Part No. IRF7811A IRF7809A IRF7811ATR
OCR Text ...olute Maximum Ratings Parameter drain-Source Voltage Gate-Source Voltage Continuous drain or Source Current (VGS 4.5V) Pulsed drain Current Power Dissipation TA = 25C TL = 90C Junction & Storage Temperature Range Continuous Source Current ...
Description PROVISIONAL DATASHEET
Chipset for DC-DC Converters
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package

File Size 124.48K  /  4 Page

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    IRF840AL IRF840AS IRF840ASTRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF840AL IRF840AS IRF840ASTRR
OCR Text ...5C VGS dv/dt TJ TSTG Continuous drain Current, VGS @ 10V Continuous drain Current, VGS @ 10V Pulsed drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Juncti...
Description TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 8A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 500V五(巴西)直| 8A条(丁)|63AB
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) 功率MOSFET(减振钢板基本\u003d 500V及的Rds(on)最大值\u003d 0.85ohm,身份证\u003d 8.0A
Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)

File Size 125.49K  /  10 Page

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    IRF840A

IRF[International Rectifier]
Part No. IRF840A
OCR Text ...5C VGS dv/dt TJ TSTG Continuous drain Current, VGS @ 10V Continuous drain Current, VGS @ 10V Pulsed drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Tem...
Description Power MOSFET(Vdss=500V/ Rds(on)max=0.85ohm/ Id=8.0A)
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A)
Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)

File Size 87.92K  /  8 Page

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    IRF840B IRFS840B IRFS840 IRF840

FAIRCHILD[Fairchild Semiconductor]
Part No. IRF840B IRFS840B IRFS840 IRF840
OCR Text ...ss otherwise noted Parameter drain-Source Voltage - Continuous (TC = 25C) drain Current - Continuous (TC = 100C) drain Current - Pulsed (Note 1) IRF840B 500 8.0 5.1 32 30 (Note 2) (Note 1) (Note 1) (Note 3) IRFS840B 8.0 5.1 32 3...
Description 500V N-Channel MOSFET

File Size 908.43K  /  10 Page

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    IRF840LCL IRF840LCS

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF840LCL IRF840LCS
OCR Text ...AR EAR dv/dt TJ TSTG Continuous drain Current, VGS @ 10V Continuous drain Current, VGS @ 10V Pulsed drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Cur...
Description Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) 功率MOSFET(减振钢板基本\u003d 500V及的Rds(on)\u003d 0.85ohm,身份证\u003d 8.0A
Power MOSFET(Vdss=500V Rds(on)=0.85ohm Id=8.0A)

File Size 169.91K  /  10 Page

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    IRF9130SMD

TT electronics Semelab Limited
SEME-LAB[Seme LAB]
Part No. IRF9130SMD
OCR Text ... SMD 1 Pad 1 - Gate Pad 2 - drain Pad 3 - Source * ALL LEADS ISOLATED FROM CASE (also available as IRFN9130SMD with Gate and Source reversed) ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VGS ID ID IDM PD TJ ,...
Description P-Channel Power MOSFET For HI-REL Application(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)(P沟道功率MOS场效应管,HI-REL应用(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω))
P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

File Size 20.44K  /  2 Page

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