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				Electronic Theatre Controls, Inc. ON Semiconductor
Part No.	NTMS10P02R2-D NTMS10P02R2/D
OCR Text	... http://onsemi.com P-Channel D G S Applications * Power Management in Portable and Battery-Powered Products, i.e.: Cellular and...12 50 2.5 -10 -8.0 0.6 -5.5 -50 80 1.6 -8.8 -6.4 0.4 -4.5 -44 -55 to +150 500 Unit Vdc Vdc C/W W A A...
Description	HDTMOS3e Single SO-8 HDTMOS3e单的SO - 8 HDTMOS3e Single SO-8 P-Channel Enhancement-Mode Power MOSFET
File Size	105.84K / 8 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	MMSF3350-D
OCR Text	...OSFET 30 VOLTS RDS(on) = 11 mW D G S MARKING DIAGRAM 8 SO-8 CASE 751 Style 12 1 XXX A L Y W = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week XXXXXX ALYW (c) Semiconductor Components Industries, LLC, 2002 ...
Description	WaveFETE HDTMOSE Single N-Channel Field Effect Transistor Power Surface Mount Products
File Size	137.16K / 12 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	MGW21N60ED-D
OCR Text	...c = 25 c derate above 25 c p d 142 1.14 watts w/ c operating and storage junction temperature range t j , t stg 55 to 150 c short circu...12 5 c) t f e 220 e turnoff switching loss r g = 20 w , t j = 125 c) energy losses include ...
Description	Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
File Size	127.43K / 6 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	MGW14N60ED-D
OCR Text	...c = 25 c derate above 25 c p d 112 0.89 watts w/ c operating and storage junction temperature range t j , t stg 55 to 150 c short circu...12 5 c) t f e 212 e turnoff switching loss r g = 20 w , t j = 125 c) energy losses include ...
Description	Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
File Size	124.38K / 6 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	MGP7N60ED-D
OCR Text	...c = 25 c derate above 25 c p d 81 0.65 watts w/ c operating and storage junction temperature range t j , t stg 55 to 150 c short circui...12 5 c) q rr e 247 e nc internal package inductance internal emitter inductance (measured from the ...
Description	Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
File Size	120.86K / 6 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	MGP4N60ED-D
OCR Text	...c = 25 c derate above 25 c p d 62.5 0.51 watts w/ c operating and storage junction temperature range t j , t stg 55 to 150 c short circ...12 5 c) q rr e 115 e nc internal package inductance internal emitter inductance (measured from the ...
Description	Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
File Size	122.50K / 6 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	MGP11N60ED-D
OCR Text	...c = 25 c derate above 25 c p d 96 0.77 watts w/ c operating and storage junction temperature range t j , t stg 55 to 150 c short circui...12 5 c) t f e 228 e turnoff switching loss r g = 20 w , t j = 125 c) energy losses include ...
Description	Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
File Size	122.69K / 6 Page	View it Online	Download Datasheet

				LIGITEK electronics co., ltd.
Part No.	LA182B-1-230-D
OCR Text	D DATA SHEET DOC. NO : REV. DATE : : QW0905-L A182B-1/230-D C 19 - Mar. - 2005 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek ...12.12 G 5.0 G YG G G G YG G G G YG 3.0 YG 5.0 20.3 G 5.0 1 + G G G ...
Description	LED ARRAY
File Size	140.86K / 6 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	MBR2030CTL-D
OCR Text	d mbr2030ctl preferred device switchmode ? dual schottky power rectifier . . . employing the schottky barrier principle in a large area met...12 rated voltage applied r jc = 2 c/w i , forward current (amps) f(av) 130 16 0 dc squar...
Description	SWITCHMODE Dual Schottky Power Rectifier
File Size	64.23K / 8 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	MSD6150-D
OCR Text	...a = 25 c derate above 25 c p d (1) 625 5.0 mw mw/ c operating and storage junction temperature range t j , t stg (1) 55 to +135 c elect...12.5 c/w, q ja = 125 c. on semiconductor ? semiconductor components industries, llc, 2001 marc...
Description	Dual Diode Common Anode
File Size	38.91K / 4 Page	View it Online	Download Datasheet

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