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Renesas Electronics Corporation. RENESAS[Renesas Electronics Corporation]
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Part No. |
BCR08AS-12A-T24 BCR08AS-12 BCR08AS-12A-T14
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OCR Text |
...gger voltage Thermal resistance critical-rate of rise of off-state Note4 commutating voltage
Tj = 125C, VD = 1/2 VDRM Junction to ambientNote3 Tj = 125C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.... |
Description |
8-input NAND gate Dual 2-wide 2-input, 2-wise 3-input AND-OR-invert gate Triac Low Power Use
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File Size |
138.33K /
8 Page |
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it Online |
Download Datasheet |
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RENESAS[Renesas Electronics Corporation]
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Part No. |
BCR08AM
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OCR Text |
...gger voltage Thermal resistance critical-rate of rise of off-state commutating voltage
Tj=125C
2. Measurment using the gate trigger characteristics measurement circuit. 3. Case temperature is measured at the T2 terminal 1.5mm away fro... |
Description |
MITSUBISHI SEMICONDUCTOR LOW POWER USE PLANAR PASSIVATION TYPE
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File Size |
90.08K /
6 Page |
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it Online |
Download Datasheet |
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FAIRCHILD[Fairchild Semiconductor]
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Part No. |
RMPA5252
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OCR Text |
...ote: 1. Turn on sequence is not critical and it is not necessary to sequence power supplies in actual system level design
Pin
VCC (total) VM12 and VM34
Current
180 mA 28 mA
6 RMPA5252 Rev. C
www.fairchildsemi.com
RMPA5252 4... |
Description |
4.9-5.9 GHz InGaP HBT WLAN Linear Power Amplifier
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File Size |
244.15K /
7 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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