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FUJI[Fuji Electric]
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| Part No. |
2SK3271-01
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| OCR Text |
...GS=0V f=1MHz VCC=30v VGS=10V ID=80a RGS=10 Tch=25C L = 100H IF=80a VGS=0V Tch=25C IF=50A VGS=0V -dIF/dt=100A/s Tch=25C
Min. 60 2,5
Typ. 3,0 1,0 10,0 10 5,0 50 9000 1250 700 50 200 150 135 1,0 85 0,25
Max. 3,5 100,0 500,0 100 6,5
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| Description |
N-channel MOS-FET
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| File Size |
255.58K /
2 Page |
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it Online |
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SIEMENS AG
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| Part No. |
SPP80N06S2L-051
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| OCR Text |
... 2* i d * r ds(on)max , i d =80a 76 152 - s input capacitance c iss v gs =0v, v ds =25v, f =1mhz - 5700 7100 pf output capacitance c o...30v, v gs =4.5v, i d =80a, r g =1.3 ? - 25 38 ns rise time t r - 322 483 turn-off delay time t d... |
| Description |
OptiMOS Power-Transistor( MOS 型功率晶体管)
OptiMOS Power-Transistor( MOS ??????浣??)
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| File Size |
93.04K /
8 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SPB100N06S2L-05 SPP100N06S2L-05
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| OCR Text |
...lanche energy, single pulse
ID=80a, V DD=25V, RGS=25
Repetitive avalanche energy, limited by Tjmax 2) Reverse diode dv/dt
IS=100A, VDS=...30v, VGS =4.5V, ID =100A, RG =1.3
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19 57 170 3.3
25 90 230 -
nC
V(plateau) VDD =44V,... |
| Description |
Low Voltage MOSFETs - TO220/263; 100 A; 55V; LL; 4,7 mOhm
OptiMOS Power-Transistor
Silver Mica Capacitor; Capacitance:15pF; Capacitance Tolerance: /- 5%; Series:CD6; Voltage Rating:500VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:4.4mm; Leaded Process Compatible:No RoHS Compliant: No
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| File Size |
310.03K /
8 Page |
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it Online |
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Infineon
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| Part No. |
SPP80N06S2-07 SPB80N06S2-07
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| OCR Text |
... mj reverse diode d v /d t i s =80a, v ds =44v, d i /d t =200a/s, t jmax =175c d v /d t 6 kv/s gate source voltage v gs 20 v power dissip...30v, v gs =10v, i d =80a, r g =3.3 - 16 24 ns rise time t r - 37 56 turn-off delay time t d(of... |
| Description |
Low Voltage MOSFETs - TO220/263/262; 80a; 55V; NL; 6.6mOhm
N-Channel OptiMOS Power Transistor
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| File Size |
515.70K /
8 Page |
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it Online |
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SIEMENS AG
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| Part No. |
SPP80N06S2-05
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| OCR Text |
... 2* i d * r ds(on)max , i d =80a 66 132 - s input capacitance c iss v gs =0v, v ds =25v, f =1mhz - 5080 6350 pf output capacitance c o...30v, v gs =10v, i d =80a, r g =2.2 ? - 18 27 ns rise time t r - 126 190 turn-off delay time t d ... |
| Description |
OptiMOS Power-Transistor( MOS 型功率晶体管)
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| File Size |
92.18K /
8 Page |
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it Online |
Download Datasheet |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SPB100N03S2L-03 SPP100N03S2L-03 SPI100N03S2L-03
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| OCR Text |
...tate resistance
V GS=4.5V, I D=80a V GS=4.5V, I D=80a, SMD version
Drain-source on-state resistance
V GS=10V, I D=80a V GS=10V, I D=80a, SMD version
1Current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID=... |
| Description |
100 A, 30 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
OptiMOS Power-Transistor 的OptiMOS功率晶体
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30v, D2PAK, RDSon = 2.7mOhm, 100 A, LL
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30v, TO-220, RDSon = 3mOhm, 100A, LL
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| File Size |
416.96K /
8 Page |
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it Online |
Download Datasheet |
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Infineon
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| Part No. |
SPB80N06S2L-11
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| OCR Text |
... mj reverse diode d v /d t i s =80a, v ds =44v, d i /d t =200a/s, t jmax =175c d v /d t 6 kv/s gate source voltage v gs 20 v power dissip...30v, v gs =4.5v, i d =80a, r g =3 - 8.4 13 ns rise time t r - 19 29 turn-off delay time t d(of... |
| Description |
N-Channel OptiMOS Power Transistor
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| File Size |
517.74K /
8 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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