20v-200v pdf Datasheet P15 Full Text Search --- IC-ON-LINE


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20v-200v Datasheet PDF File

For 20v-200v Found Datasheets File :: 5445 Search Time::5.953ms
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				InternationalRectifier IRF[International Rectifier]
Part No.	25MT060WF
OCR Text	..., V GE = 0V, T J = 150C V GE = 20V V Switching Characteristics @ TJ = 25C (unless otherwise specified) Parameters Qg Qge Qgc Eon Eoff(...200V, IC = 25A di/dt = 200A/s J pF ns A nC A/s Thermal- Mechanical Specifications Param...
Description	FULL-BRIDGEIGBTMTP FULL-BRIDGE IGBT MTP 600V Warp 20-100 kHz Full-Bridge IGBT in a MTP package
File Size	75.54K / 3 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	50MT060WH 50MT060WHT
OCR Text	...50C 100A, VGE = 0V, TJ = 25C = 20V V GE(th) I CES V FM Gate Threshold Voltage Collector-to-Emiter Leaking Current Diode Forward Volta...200V, IC = 50A di/dt = 200A/s VCC = 200V, IC = 50A di/dt = 200A/s TJ = 125C Thermistor Specifi...
Description	600V Warp 20-100 kHz Half-Bridge IGBT in a MTP package HALF-BRIDGE IGBT MTP
File Size	59.29K / 7 Page	View it Online	Download Datasheet

				Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
Part No.	APT6025BVFR
OCR Text	... 10 0 1.2 1.1 VGS=10V VGS=20V TJ = +125C TJ = +25C TJ = -55C 1.0 0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 25 ID, DRAIN CURRENT (AMPERES) 0.9 0 10 20 30 40 50 60 ID, DRA...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET POWER MOS V 600V 25A 0.250 Ohm
File Size	69.66K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT6030 APT6030BVFR
OCR Text	... R A IN IM L E R P VGS=10V VGS=20V TJ = +25C TJ = -55C 0.9 0 1.15 1.10 1.05 1.00 0.95 0.90 -50 1.2 D 8 16 24 32 40 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 10 5 50 75 100 125 150 TC, CASE TEMPERATURE (C) ...
Description	POWER MOS V 600V 21A 0.300 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	62.94K / 4 Page	View it Online	Download Datasheet

				POSEICO SPA POSEICO[Power Semiconductors]
Part No.	AT681 AT681S60
OCR Text	...5% of VDRM VD=200V, gate source 20V, 10 ohm dV/dt = 20 V/s linear up to 80% VDRM di/dt=-60 A/s, I= 1000 A VR= 50 V 120 120 25 120 25 25 100 500 5 650 A/s V/s s s C A 300 700 mA mA GATE V I V V I V P P GT GT GD FGM FGM RG...
Description	PHASE CONTROL THYRISTOR
File Size	42.26K / 4 Page	View it Online	Download Datasheet

				Diodes Incorporated Zetex Semiconductors
Part No.	FZT757
OCR Text	...00mA, VCE =-5V* IC=-10mA, VCE =-20V f=20MHz VCB=-20V, f=1MHz Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown V(BR)EBO Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter...
Description	SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR
File Size	89.31K / 2 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	HGTD10N40F1 HGTD10N40F1S HGTD10N50F1 HGTD10N50F1S
OCR Text	....5 2.2 IGES VCE(ON) VGE = 20V, VCE = 0V TJ = TJ = TJ = +150oC, +150oC, +25oC, IC = 5A, VGE = 10V IC = 5A, VGE = 15V IC = 5A, VGE = ...200V 0 1 10 ICE, COLLECTOR-EMITTER CURRENT (A) 100 0.1 1 10 ICE, COLLECTOR-EMITTER CURRENT (A)...
Description	10A/ 400V and 500V N-Channel IGBTs 10A, 400V and 500V N-Channel IGBTs
File Size	32.54K / 4 Page	View it Online	Download Datasheet

				NTE[NTE Electronics]
Part No.	NTE191 NTE240
OCR Text	...itance: Ccb = 3pF (Max) @ VCB = 20V Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . ...200V, IE = 0 VBE = 6V, IC = 0 - - - - 0.2 0.1 A A Symbol Test Conditions Min Typ Max Unit Note 3....
Description	Silicon complemenrary PNP transistor. High voltage video amplifier. Silicon Complementary Transistors High Voltage Video Amplifier
File Size	23.16K / 2 Page	View it Online	Download Datasheet

				NTE[NTE Electronics]
Part No.	NTE2900
OCR Text	...00V, VGS = 0V, TJ = +125C VGS = 20V VGS = -20V ID = 7.9A, VDS = 200V, VGS = 10V, Note 4 Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay T...
Description	MOSFET N-Ch, Enhancement Mode High Speed Switch
File Size	28.45K / 3 Page	View it Online	Download Datasheet

				NTE[NTE Electronics]
Part No.	NTE2921
OCR Text	...00V, VGS = 0V, TJ = +125C VGS = 20V VGS = -20V ID = 11A, VDS = 200V, VGS = 10V, Note 4 Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Ti...
Description	MOSFET N-Ch, Enhancement Mode High Speed Switch
File Size	28.65K / 3 Page	View it Online	Download Datasheet

For 20v-200v Found Datasheets File :: 5445 Search Time::5.953ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |