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IRF[International Rectifier]
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| Part No. |
IRFN054
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| OCR Text |
.... The Surface Mount Device (SMD-1) package represents another step in the continual evolution of surface mount technology. The SMD-1 will gi...64A
Fig. 3 -- Typical Transfer Characteristics
Fig. 4 -- Normalized On-Resistance Vs.Temperatu... |
| Description |
POWER MOSFET N-CHANNEL(BVdss=60V, Rds(on)=0.020ohm, Id=55A*)
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| File Size |
180.33K /
6 Page |
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IRF[International Rectifier]
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| Part No. |
IRFZ48NSPBF IRFZ48NLPBF
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| OCR Text |
... 20 32 13 5.0 -55 to + 175 300 (1.6mm from case )
Units
A W W W/C V A mJ V/ns C
Thermal Resistance
Parameter
RqJC RqJA Junction-to-...64A
I D , Drain-to-Source Current (A)
2.0
100
1.5
1.0
10
0.5
1
V DS = 25V... |
| Description |
HEXFET Power MOSFET
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| File Size |
291.52K /
10 Page |
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IRF[International Rectifier]
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| Part No. |
IRFZ48N IRFZ48NPBF
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| OCR Text |
... 20 32 13 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Units
A W W/C V A mJ V/ns C
Thermal Resistance
Parameter
RJC R...64A
TJ = 25 C TJ = 175 C
R DS(on) , Drain-to-Source On Resistance (Normalized)
I D , Drai... |
| Description |
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
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| File Size |
100.17K /
8 Page |
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IRF[International Rectifier]
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| Part No. |
IRL3103SPBF IRL3103LPBF
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| OCR Text |
... 16 34 22 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Units
A W W/C V A mJ V/ns C
Thermal Resistance
Parameter
RJC RJA Junction-to-Case Junction-to-Ambient (PCB mount)**
Typ.
--- ---
Max.
1.6 40
Units
C/W... |
| Description |
HEXFET? Power MOSFET
HEXFET㈢ Power MOSFET
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| File Size |
642.43K /
10 Page |
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IRF[International Rectifier]
http://
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| Part No. |
IRL3502_03 IRL3502 IRL3502PBF IRL350203
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| OCR Text |
...M3 srew
Max.
110 67 420 140 1.1 10 14 390 64 14 5.0 -55 to + 150 300 (1.6mm from case ) 10 lbfin (1.1Nm)
Units
A W W/C V V mJ A mJ ...64A 0.007 VGS = 7.0V, ID = 64A V VDS = VGS , ID = 250A S VDS = 10V, ID = 64A 25 VDS = 20V, V GS... |
| Description |
HEXFET Power MOSFET
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| File Size |
170.19K /
7 Page |
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IXYS[IXYS Corporation]
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| Part No. |
IXGH32N60BU1
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| OCR Text |
...to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 33 Clamped inductive...64A
VCE (sat) - Normalized
80
1.50
IC - Amperes
60 40 20 0
1.25
IC = 32A
1.00
... |
| Description |
HiPerFAST IGBT with Diode
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| File Size |
136.66K /
6 Page |
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IXYS[IXYS Corporation]
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| Part No. |
IXGR32N60CD1
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| OCR Text |
...d Tab temperature for soldering 1.6 mm (0.062 in.) from case for 10 s VISOL Weight 50/60 Hz, RMS t = 1 min leads-to housing Test Conditions ...64A
IC - Amperes
60 40 20
5V 7V
1.00
IC = 32A IC = 16A
0.75
0
0
1
2
3... |
| Description |
HiPerFAST IGBT with Diode ISOPLUS247
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| File Size |
567.82K /
5 Page |
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IXYS[IXYS Corporation]
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| Part No. |
IXGT32N60C IXGH32N60C
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| OCR Text |
1 V = 55 ns
Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; R...64A
VCE (sat) - Normalized
80
1.25
IC = 32A
IC - Amperes
60 40 20
5V 7V
1.00
... |
| Description |
HiPerFAST IGBT Lightspeed Series
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| File Size |
81.97K /
4 Page |
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it Online |
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Price and Availability
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